In recent years several ferroelectric thin films have been studied at microwave frequencies; lead zirconate titanate (PZT) and barium-strontium titanate (BST) has been widely investigated. However, the microwave dielectric properties of strontium-bismuth tantalate (SBT) have not yet been investigated so widely [1]. The purpose of this work is the microwave characterization of the dielectric properties of an SBT thin film biased at different DC voltages. The dielectric properties of SBT make it a good material for the production of FERAM memories. Microwave characterizations may show other properties that could promote the SBT as good candidate for capacitors to be employed also in microwave circuits (e.g. resonators and filters). In this work a study of high frequency dielectric properties has been performed and equivalent circuit model has been used to correct the measurements.
A study of the high frequency dielectric properties of ferroelectrics / Delmonte, Nicola; Watts, B.; Leccabue, F.; Cova, Paolo; Chiorboli, Giovanni. - STAMPA. - 514-516:(2005), pp. 259-263. (Intervento presentato al convegno XII Portuguese Materials Society Meeting - III International Materials Synposium (MATERIAS 2005) tenutosi a Aveiro, Portogallo nel 20-23 marzo 2005) [10.4028/www.scientific.net/MSF.514-516.259].
A study of the high frequency dielectric properties of ferroelectrics
DELMONTE, Nicola;COVA, Paolo;CHIORBOLI, Giovanni
2005-01-01
Abstract
In recent years several ferroelectric thin films have been studied at microwave frequencies; lead zirconate titanate (PZT) and barium-strontium titanate (BST) has been widely investigated. However, the microwave dielectric properties of strontium-bismuth tantalate (SBT) have not yet been investigated so widely [1]. The purpose of this work is the microwave characterization of the dielectric properties of an SBT thin film biased at different DC voltages. The dielectric properties of SBT make it a good material for the production of FERAM memories. Microwave characterizations may show other properties that could promote the SBT as good candidate for capacitors to be employed also in microwave circuits (e.g. resonators and filters). In this work a study of high frequency dielectric properties has been performed and equivalent circuit model has been used to correct the measurements.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
