In this work we show for the first time evidence of gate-drain breakdown walkout due to hot electrons in pseudoniorphic AlGaAs/InGaAs/GaAs HEMT's (PHEMT's). Experiments performed on passivated commercial PHEMT's show that hot electron stress cycles induce a large and permanent increase of the gate-drain breakdown voltage. Three-terminal and twoterminal stress conditions are compared, the former producing a much larger walkout due to hot electrons Bowing in the channel. Experimental results indicate that a build-up of negative charge in the region between gate and drain is responsible for the breakdown walkout, due to a local widening of the depletion region and a reduction of the peak electric field.

Breakdown walkout in pseudomorphic HEMTs / MENOZZI R; COVA P.; FANTINI; F; CANALI C. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 43(1996), pp. 543-546. [10.1109/16.485535]

Breakdown walkout in pseudomorphic HEMTs

MENOZZI, Roberto;COVA, Paolo;
1996

Abstract

In this work we show for the first time evidence of gate-drain breakdown walkout due to hot electrons in pseudoniorphic AlGaAs/InGaAs/GaAs HEMT's (PHEMT's). Experiments performed on passivated commercial PHEMT's show that hot electron stress cycles induce a large and permanent increase of the gate-drain breakdown voltage. Three-terminal and twoterminal stress conditions are compared, the former producing a much larger walkout due to hot electrons Bowing in the channel. Experimental results indicate that a build-up of negative charge in the region between gate and drain is responsible for the breakdown walkout, due to a local widening of the depletion region and a reduction of the peak electric field.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11381/1642693
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