This work reports on hot electron reliability of 0.25 μm Alo.25−Ga0.75As/In0.2Ga0.8As/GaAs PHEMTs from the viewpoint of both DC and RF characteristics. The changes of DC and RF behavior after high drain bias stressing are shown to be strongly correlated. Both can be attributed to a decrease of the threshold voltage, yielding different effects on gain depending on the bias point and circuitry chosen for device operation: a fixed current bias scheme is shown to minimize the changes induced by the stress.
The effect of hot electron stress on the DC and microwavecharacteristics of AlGaAs/InGaAs/GaAs PHEMTs / Menozzi, Roberto; Borgarino, M; Cova, Paolo; Baeyens, Y; Fantini, F.. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 36:(1996), pp. 1899-1902. [10.1016/0026-2714(96)00224-7]
The effect of hot electron stress on the DC and microwavecharacteristics of AlGaAs/InGaAs/GaAs PHEMTs
MENOZZI, Roberto;COVA, Paolo;
1996-01-01
Abstract
This work reports on hot electron reliability of 0.25 μm Alo.25−Ga0.75As/In0.2Ga0.8As/GaAs PHEMTs from the viewpoint of both DC and RF characteristics. The changes of DC and RF behavior after high drain bias stressing are shown to be strongly correlated. Both can be attributed to a decrease of the threshold voltage, yielding different effects on gain depending on the bias point and circuitry chosen for device operation: a fixed current bias scheme is shown to minimize the changes induced by the stress.| File | Dimensione | Formato | |
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