IRIS
GEDDO, Mario
 Distribuzione geografica
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Continente #
NA - Nord America 727
EU - Europa 472
AS - Asia 226
AF - Africa 1
Totale 1.426
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Nazione #
US - Stati Uniti d'America 714
CN - Cina 108
UA - Ucraina 104
IE - Irlanda 100
SG - Singapore 84
FI - Finlandia 73
SE - Svezia 73
DE - Germania 59
TR - Turchia 30
GB - Regno Unito 29
BE - Belgio 17
CA - Canada 13
IT - Italia 10
NL - Olanda 6
IN - India 2
AT - Austria 1
EG - Egitto 1
HK - Hong Kong 1
IL - Israele 1
Totale 1.426
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Città #
Chandler 139
Jacksonville 101
Dublin 100
Santa Clara 84
Singapore 69
Ann Arbor 63
Dearborn 46
Boardman 39
Izmir 29
San Mateo 24
Helsinki 22
Ashburn 21
Princeton 21
Nanjing 19
Brussels 17
Wilmington 16
Beijing 13
Toronto 13
Shanghai 12
Shenyang 12
Nanchang 11
Woodbridge 10
Bremen 8
Parma 8
Auburn Hills 7
Jiaxing 6
Kunming 6
Changsha 5
Falkenstein 5
Norwalk 5
Hefei 4
Jinan 3
Los Angeles 3
Amsterdam 2
Bethlehem 2
Hebei 2
New York 2
Pavia 2
Pune 2
Seattle 2
Taiyuan 2
Taizhou 2
Tianjin 2
Cairo 1
Chengdu 1
Chongqing 1
Guangzhou 1
Hangzhou 1
Hong Kong 1
Houston 1
Jinhua 1
Kocaeli 1
London 1
Nanning 1
Rockville 1
Tappahannock 1
Tel Aviv 1
Vienna 1
Zhengzhou 1
Totale 977
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Nome #
Interband optical properties of molecular-beam epitaxially grown GaAs1-xSbx on GaAs substrates 103
Metamorphic buffers and optical measurement of residual strain 80
HYDROGEN TUNING OF (INGA)(ASN) OPTICAL PROPERTIES 79
EFFECT OF HYDROGEN ON THE ELECTRONIC PROPERTIES OF GAAS1-YNY HETEROSTRUCTURES 77
Optical study of Al0.4Ga0.6Sb/GaSb single quantum wells 76
Thermoreflectance study of direct optical gap in epitaxial AlxGa1-xSb 75
Studies of photoreflectance spectra in CdxMn1-xTe/CdTe superlattices with high compositions 67
Effect of nitrogen on the temperature dependence of the energy gap in InxGa1-xAs1-yNy/GaAs single quantum wells 67
Optical characterization of hierarchically self-assembled GaAs/AlGaAs quantum dots 67
PHOTOREFLECTANCE EVIDENCE OF THE N-INDUCED INCREASE OF THE EXCITON BINDING ENERGY IN AN (InGa)(AsN) ALLOY 65
Photoreflectance investigation of hydrogenated (InGa)(AsN)/GaAs heterostructures 65
Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V mtallorganic source 65
Optical study of the strain driven tuning of the emission energy in InAs/InGaAs quantum-dot nanostructures 64
Optical investigation of ALMBE grown InAs self-assembled quantum dots embedded in InxGa1-xAs matrix 62
Photoreflectance study of hydrogenated (InGa)(AsN)/GaAs heterostructures 62
Photoreflectance spectroscopy of InAs self-assembled quantum dots 61
Effect of temperature on the optical properties of (InGa)(AsN)/GaAs single quantum wells 60
Photoreflectance investigation of InAs/GaAs self-assembled quantum dots grown by ALMBE 60
Temperature dependence of light emission and absorption in (InGa)(AsN)/GaAs single quantum wells 59
Luminescence from b-FeSi2 precipitates in Si. II; Origin and nature of the Photoluminescence 58
Photoreflectance characterization of InAs/GaAs self-assembled quantum dots grown by ALMBE 56
Totale 1.428
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Categoria #
all - tutte 5.099
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 5.099
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020153 0 0 0 0 0 33 48 9 22 16 6 19
2020/2021158 5 25 21 3 19 1 23 3 28 4 25 1
2021/2022113 3 4 1 5 2 2 16 20 9 12 12 27
2022/2023423 45 58 21 34 53 46 0 14 133 3 12 4
2023/202493 10 15 4 4 11 12 1 6 11 3 11 5
2024/2025204 1 22 26 11 54 90 0 0 0 0 0 0
Totale 1.428