Sfoglia per Autore
Optical properties of GaSb/Al0.4Ga0.6Sb multiple quantum wells
2000-01-01 Bottazzi, C; Parisini, Antonella; Tarricone, Luciano; Magnanini, R; Baraldi, Andrea
Experimental evidence of delocalization in correlated disorder superlattices
2000-01-01 Bellani, V; Diez, E; Parisini, Antonella; Tarricone, Luciano; Hey, R; Parravicini, G. B.; DOMINGUEZ ADAME, F.
Effects of inhomogeneities and ordering in InGaP/GaAs system grown by MOVPE
2000-01-01 Attolini, G.; Bocchi, C.; Germini, F.; Pelosi, C.; Parisini, Antonella; Tarricone, Luciano; Kudela, R.; Hasenohrl, S.
Electronic structure and vertical transport in random dimer GaAs/AlxGa1-xAs superlattices
2001-01-01 Parisini, Antonella; Tarricone, Luciano; Bellani, V; Parravicini, G. B.; Diez, E; DOMINGUEZ ADAME, F; Hey, R.
Photoluminescence investigation of superlattice ordering in organometallic vapour phase epitaxy grown InGaP layers
2001-01-01 Longo, M.; Parisini, Antonella; Tarricone, Luciano; Toni, L.; Kudela, R.
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs
2002-01-01 A., Carbognani; M., Longo; Magnanini, Renato; Parisini, Antonella; Tarricone, Luciano; E., Gombia
Optical functions from 0.01 to 5 eV of InGaP/GaAs epitaxial layers
2002-01-01 Ferrini, R; Guizzetti, G; Patrini, M; Parisini, Antonella; Tarricone, Luciano; Valenti, B.
PREPARATION AND CHARACTERIZATION OF Au/InGaP/GaAs SCHOTTKY BARRIERS FOR RADIATION DAMAGE INVESTIGATIONS
2003-01-01 E., Gombia; R., Mosca; D., Pal; S., Busi; Tarricone, Luciano; P. G., Fuochi; M., Lavalle
Electrical investigation of carbon intrinsic doped GaAs layers grown by MOVPE from TMGa and TBAs
2003-01-01 Ghezzi, Carlo; Longo, M.; Magnanini, Renato; Parisini, Antonella; Tarricone, Luciano; Carbognani, A.; Bocchi, C.; Gombia, E.
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs
2003-01-01 Longo, M; Magnanini, Renato; Parisini, Antonella; Tarricone, Luciano; Carbognani, A; Bocchi, C; Gombia, E.
Structural and electrical investigation of high temperature Fe implanted GaInP layers lattice matched to GaAs.
2004-01-01 Cesca, T; Gasparotto, A; Verna, A; Fraboni, B; Priolo, F; Tarricone, Luciano; Rampino, S; Longo, M.
Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V mtallorganic source
2004-01-01 Begotti, L; Longo, Massimo; Magnanini, R; Parisini, A; Tarricone, L.; Bocchi, C; Germini, Fabrizio; Lazzarini, Laura; Nasi, L; Geddo, M
ELECTRICAL AND PHOTOELECTRICAL PROPERTIES OF A GaAs-BASED p-i-n STRUCTURE GROWN BY MOVPE
2005-01-01 Begotti, M.; Tarricone, Luciano; Mosca, R. LYNCH M.; Barnham, K.; Mazzer, M.; Hill, G.
High Resistivity in GaInP/GaAs by High Temperature Fe Ion Implantation
2005-01-01 Cesca, T; Verna, A; Gasparotto, A; Fraboni, B; Impellizzeri, G; Priolo, F; Tarricone, Luciano; Longo, M.
High Resistivity in GaInP/GaAs by High Temperature Fe Ion Implantation
2005-01-01 T., Cesca; A., Verna; A., Gasparotto; B., Fraboni; G., Impellizzeri; F., Priolo; Tarricone, Luciano; AND M., Longo
Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources
2005-01-01 Begotti, M.; Ghezzi, Carlo; Longo, M.; Magnanini, Renato; Parisini, Antonella; Tarricone, Luciano; Vantaggio, Salvatore
Structural and Electrical Characterization of Fe Implanted GaInP: Interaction of Fe with Ion Induced Defects and Deep Trap Activation
2005-01-01 T., Cesca; A., Gasparotto; A., Verna; B., Fraboni; G., Impellizzeri; F., Priolo; Tarricone, Luciano; M., Longo
Incorporation of active Fe impurities in GaInP by high temperature ion implantation.
2006-01-01 T., Cesca; A., Gasparotto; A., Verna; B., Fraboni; G., Impellizzeri; F., Priolo; Tarricone, Luciano; M., Longo
Electrical activation of Fe impurities introduced in III-V semiconductors by high temperature ion implantation
2006-01-01 Cesca, T; Verna, A; Mattei, G; Gasparotto, A; Fraboni, B; Impellizzeri, G; Priolo, F; Tarricone, Luciano; Longo, M.
“Local structure of Fe incorporated in GaInP layers by high temperature ion implantation.”.
2007-01-01 T., Cesca; A., Gasparotto; G., Mattei; B., Fraboni; F., Boscherini; M., Longo; Tarricone, Luciano; F., Priolo
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Optical properties of GaSb/Al0.4Ga0.6Sb multiple quantum wells | 1-gen-2000 | Bottazzi, C; Parisini, Antonella; Tarricone, Luciano; Magnanini, R; Baraldi, Andrea | |
Experimental evidence of delocalization in correlated disorder superlattices | 1-gen-2000 | Bellani, V; Diez, E; Parisini, Antonella; Tarricone, Luciano; Hey, R; Parravicini, G. B.; DOMINGUEZ ADAME, F. | |
Effects of inhomogeneities and ordering in InGaP/GaAs system grown by MOVPE | 1-gen-2000 | Attolini, G.; Bocchi, C.; Germini, F.; Pelosi, C.; Parisini, Antonella; Tarricone, Luciano; Kudela, R.; Hasenohrl, S. | |
Electronic structure and vertical transport in random dimer GaAs/AlxGa1-xAs superlattices | 1-gen-2001 | Parisini, Antonella; Tarricone, Luciano; Bellani, V; Parravicini, G. B.; Diez, E; DOMINGUEZ ADAME, F; Hey, R. | |
Photoluminescence investigation of superlattice ordering in organometallic vapour phase epitaxy grown InGaP layers | 1-gen-2001 | Longo, M.; Parisini, Antonella; Tarricone, Luciano; Toni, L.; Kudela, R. | |
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs | 1-gen-2002 | A., Carbognani; M., Longo; Magnanini, Renato; Parisini, Antonella; Tarricone, Luciano; E., Gombia | |
Optical functions from 0.01 to 5 eV of InGaP/GaAs epitaxial layers | 1-gen-2002 | Ferrini, R; Guizzetti, G; Patrini, M; Parisini, Antonella; Tarricone, Luciano; Valenti, B. | |
PREPARATION AND CHARACTERIZATION OF Au/InGaP/GaAs SCHOTTKY BARRIERS FOR RADIATION DAMAGE INVESTIGATIONS | 1-gen-2003 | E., Gombia; R., Mosca; D., Pal; S., Busi; Tarricone, Luciano; P. G., Fuochi; M., Lavalle | |
Electrical investigation of carbon intrinsic doped GaAs layers grown by MOVPE from TMGa and TBAs | 1-gen-2003 | Ghezzi, Carlo; Longo, M.; Magnanini, Renato; Parisini, Antonella; Tarricone, Luciano; Carbognani, A.; Bocchi, C.; Gombia, E. | |
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs | 1-gen-2003 | Longo, M; Magnanini, Renato; Parisini, Antonella; Tarricone, Luciano; Carbognani, A; Bocchi, C; Gombia, E. | |
Structural and electrical investigation of high temperature Fe implanted GaInP layers lattice matched to GaAs. | 1-gen-2004 | Cesca, T; Gasparotto, A; Verna, A; Fraboni, B; Priolo, F; Tarricone, Luciano; Rampino, S; Longo, M. | |
Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V mtallorganic source | 1-gen-2004 | Begotti, L; Longo, Massimo; Magnanini, R; Parisini, A; Tarricone, L.; Bocchi, C; Germini, Fabrizio; Lazzarini, Laura; Nasi, L; Geddo, M | |
ELECTRICAL AND PHOTOELECTRICAL PROPERTIES OF A GaAs-BASED p-i-n STRUCTURE GROWN BY MOVPE | 1-gen-2005 | Begotti, M.; Tarricone, Luciano; Mosca, R. LYNCH M.; Barnham, K.; Mazzer, M.; Hill, G. | |
High Resistivity in GaInP/GaAs by High Temperature Fe Ion Implantation | 1-gen-2005 | Cesca, T; Verna, A; Gasparotto, A; Fraboni, B; Impellizzeri, G; Priolo, F; Tarricone, Luciano; Longo, M. | |
High Resistivity in GaInP/GaAs by High Temperature Fe Ion Implantation | 1-gen-2005 | T., Cesca; A., Verna; A., Gasparotto; B., Fraboni; G., Impellizzeri; F., Priolo; Tarricone, Luciano; AND M., Longo | |
Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources | 1-gen-2005 | Begotti, M.; Ghezzi, Carlo; Longo, M.; Magnanini, Renato; Parisini, Antonella; Tarricone, Luciano; Vantaggio, Salvatore | |
Structural and Electrical Characterization of Fe Implanted GaInP: Interaction of Fe with Ion Induced Defects and Deep Trap Activation | 1-gen-2005 | T., Cesca; A., Gasparotto; A., Verna; B., Fraboni; G., Impellizzeri; F., Priolo; Tarricone, Luciano; M., Longo | |
Incorporation of active Fe impurities in GaInP by high temperature ion implantation. | 1-gen-2006 | T., Cesca; A., Gasparotto; A., Verna; B., Fraboni; G., Impellizzeri; F., Priolo; Tarricone, Luciano; M., Longo | |
Electrical activation of Fe impurities introduced in III-V semiconductors by high temperature ion implantation | 1-gen-2006 | Cesca, T; Verna, A; Mattei, G; Gasparotto, A; Fraboni, B; Impellizzeri, G; Priolo, F; Tarricone, Luciano; Longo, M. | |
“Local structure of Fe incorporated in GaInP layers by high temperature ion implantation.”. | 1-gen-2007 | T., Cesca; A., Gasparotto; G., Mattei; B., Fraboni; F., Boscherini; M., Longo; Tarricone, Luciano; F., Priolo |
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