The realization of low resistivity and stable contacts on p-type CdTe is still challenging, especially if high annealing temperatures must be avoided. In this paper, the electrical characteristics of Sb2Te3 contacts on p-type CdTe single crystals are studied. It is found that the resistivity of the contacts is low and constant with time. © 2005 IEEE.

Characterization of Sb2Te3 ohmic contacts on P-type CdTe single crystals / Zappettini, A., Bissoli, F., Gombia, E., Bosio, A., Romeo, N.. - In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE. - ISSN 0018-9499. - 52:5(2005), pp. 1961-1963. [10.1109/TNS.2005.856819]

Characterization of Sb2Te3 ohmic contacts on P-type CdTe single crystals

Bosio A.
Membro del Collaboration Group
;
Romeo N.
Membro del Collaboration Group
2005-01-01

Abstract

The realization of low resistivity and stable contacts on p-type CdTe is still challenging, especially if high annealing temperatures must be avoided. In this paper, the electrical characteristics of Sb2Te3 contacts on p-type CdTe single crystals are studied. It is found that the resistivity of the contacts is low and constant with time. © 2005 IEEE.
2005
Characterization of Sb2Te3 ohmic contacts on P-type CdTe single crystals / Zappettini, A., Bissoli, F., Gombia, E., Bosio, A., Romeo, N.. - In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE. - ISSN 0018-9499. - 52:5(2005), pp. 1961-1963. [10.1109/TNS.2005.856819]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11381/3070560
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