This paper analyzes the impact of non-ideal switching effects in three-phase, two-level inverters, focusing on dead-time, switching delays, and device conduction characteristics. A stepwise analytical approach is used to quantify their individual and combined contributions to output voltage distortion. The model is validated through simulation, and a comparative evaluation between IGBT- and MOSFET-based modules highlights key differences in distortion behavior. Results show that dead-time remains the dominant contributor, while MOSFET-based inverters exhibit more consistent and symmetric performance, offering advantages for high-precision applications.
Comprehensive Modeling and Analytical Evaluation of Non-Ideal Switching Effects in Three-Phase Two-Level Inverters / Lafmejani, H. S.; Soldati, A.. - (2025), pp. 1-7. [10.1109/IECON58223.2025.11221453]
Comprehensive Modeling and Analytical Evaluation of Non-Ideal Switching Effects in Three-Phase Two-Level Inverters
Soldati A.
2025-01-01
Abstract
This paper analyzes the impact of non-ideal switching effects in three-phase, two-level inverters, focusing on dead-time, switching delays, and device conduction characteristics. A stepwise analytical approach is used to quantify their individual and combined contributions to output voltage distortion. The model is validated through simulation, and a comparative evaluation between IGBT- and MOSFET-based modules highlights key differences in distortion behavior. Results show that dead-time remains the dominant contributor, while MOSFET-based inverters exhibit more consistent and symmetric performance, offering advantages for high-precision applications.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
