We report on the epitaxial growth of Cu(In,Ga)Se2 (CIGS) thin films on n-type Ge substrates using the Pulsed Electron Deposition (PED) technique. Single-crystal films with smooth interface and no dislocations were obtained at a substrate temperature of 300 °C with thickness above 1.5μm. CIGS/Ge epilayers were characterized in terms of Transmission Electron Microscopy, X-Ray Diffraction and Photoluminescence. Preliminary results are very promising for a variety of potential applications as absorber layer in single and multi-junction thin-film solar cells. © 2014 AEIT.
Single-crystal CuIn1-xGaxSe2 films grown on lattice-matched Ge by low-temperature Pulsed Electron Deposition technique / Colace, L.; Bronzoni, M.; De Iacovo, A.; Frigeri, P.; Gombia, E.; Maragliano, C.; Mezzadri, F.; Nasi, L.; Pattini, F.; Rampino, S.; Seravalli, L.; Trevisi, G.. - (2014), pp. 1-4. [10.1109/Fotonica.2014.6843938]
Single-crystal CuIn1-xGaxSe2 films grown on lattice-matched Ge by low-temperature Pulsed Electron Deposition technique
Colace L.;Bronzoni M.;Mezzadri F.;Nasi L.;Pattini F.;Rampino S.;Trevisi G.
2014-01-01
Abstract
We report on the epitaxial growth of Cu(In,Ga)Se2 (CIGS) thin films on n-type Ge substrates using the Pulsed Electron Deposition (PED) technique. Single-crystal films with smooth interface and no dislocations were obtained at a substrate temperature of 300 °C with thickness above 1.5μm. CIGS/Ge epilayers were characterized in terms of Transmission Electron Microscopy, X-Ray Diffraction and Photoluminescence. Preliminary results are very promising for a variety of potential applications as absorber layer in single and multi-junction thin-film solar cells. © 2014 AEIT.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
