Sb2Se3 thin films were obtained by chemical-molecular beam deposition on soda-lime glass from high purity Sb and Se precursors at 400 ◦C, 450 ◦C and 500 ◦C substrate temperature. By the exact control of the Sb/Se ratio, Sb2Se3 thin films with stoichiometric composition were obtained. The effect of substrate temperature on morphology, structure and optical properties of Sb2Se3 thin-films were studied by energy-dispersive X-ray microanalysis, X-ray diffraction, Raman spectroscopy, scanning electron microscopy and atomic force microscopy. Average diameters and lengths of Sb2Se3 rods deposited at different substrate temperature were the range of 0.5÷2 µm and 1÷4 µm respectively which was grown at different slope and compactness to the substrate. The optical bandgap of the films was determined from the transmission and reflection spectra and 1.16, 1.21 and 1.26 eV band gap energies were observed for 500, 450 and 400 ℃ substrate temperature Sb2Se3 thin films respectively.
Effect of Substrate Temperature on Structure, Morphology and Optical Properties of Sb2Se3 Thin Films Fabricated by Chemical-Molecular Beam Deposition Method from Sb and Se Precursors for Solar Cells / Razykov, Takhir M.; Bosio, Alessio; Kouchkarov, K. M.; Khurramov, Ramozan; Tivanov, Mikhail S.; Bayko, D. S.; Romeo, Alessandro; Romeo, Nicola; Torabi, Narges; Utamuradova, Sh. B.. - ELETTRONICO. - (2023), pp. 020078001-020078005. (Intervento presentato al convegno 40th European Photovoltaic Solar Energy Conference and Exhibition tenutosi a Lisbona nel Settembre 18-22) [10.4229/eupvsec2023/2bv.1.2].
Effect of Substrate Temperature on Structure, Morphology and Optical Properties of Sb2Se3 Thin Films Fabricated by Chemical-Molecular Beam Deposition Method from Sb and Se Precursors for Solar Cells
Alessio BosioValidation
;Nicola RomeoMembro del Collaboration Group
;
2023-01-01
Abstract
Sb2Se3 thin films were obtained by chemical-molecular beam deposition on soda-lime glass from high purity Sb and Se precursors at 400 ◦C, 450 ◦C and 500 ◦C substrate temperature. By the exact control of the Sb/Se ratio, Sb2Se3 thin films with stoichiometric composition were obtained. The effect of substrate temperature on morphology, structure and optical properties of Sb2Se3 thin-films were studied by energy-dispersive X-ray microanalysis, X-ray diffraction, Raman spectroscopy, scanning electron microscopy and atomic force microscopy. Average diameters and lengths of Sb2Se3 rods deposited at different substrate temperature were the range of 0.5÷2 µm and 1÷4 µm respectively which was grown at different slope and compactness to the substrate. The optical bandgap of the films was determined from the transmission and reflection spectra and 1.16, 1.21 and 1.26 eV band gap energies were observed for 500, 450 and 400 ℃ substrate temperature Sb2Se3 thin films respectively.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
