The development of many new devices is strictly connected with the availability of materials in single crystalline form, with low density of crystallographic defects and specific electrical, magnetic, optical, chemical, and mechanical properties. This implies the development of suitable growth processes by which the composition, the structure, as well as the physical properties of a given material are accurately controlled. Three major categories of crystal growth technologies have been applied to obtain large single crystals: melt growth, solution growth, and vapor transport. The basic characteristics of the material actually decide what approach is most convenient. This article reviews the theoretical basis of the crystal growth processes and the most important crystal growth techniques. Examples of growth techniques applied to specific materials are provided.

Single crystal growth / Fornari, R.. - STAMPA. - (2007), pp. 339-366.

Single crystal growth

r. Fornari
Writing – Review & Editing
2007-01-01

Abstract

The development of many new devices is strictly connected with the availability of materials in single crystalline form, with low density of crystallographic defects and specific electrical, magnetic, optical, chemical, and mechanical properties. This implies the development of suitable growth processes by which the composition, the structure, as well as the physical properties of a given material are accurately controlled. Three major categories of crystal growth technologies have been applied to obtain large single crystals: melt growth, solution growth, and vapor transport. The basic characteristics of the material actually decide what approach is most convenient. This article reviews the theoretical basis of the crystal growth processes and the most important crystal growth techniques. Examples of growth techniques applied to specific materials are provided.
2007
9780849332166
Single crystal growth / Fornari, R.. - STAMPA. - (2007), pp. 339-366.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11381/2931689
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