Organic photodetectors (OPDs) with a performance comparable to that of conventional inorganic ones have recently been demonstrated for the visible regime. However, near-infrared photodetection has proven to be challenging and, to date, the true potential of organic semiconductors in this spectral range (800–2500 nm) remains largely unexplored. In this work, it is shown that the main factor limiting the specific detectivity (D*) is non-radiative recombination, which is also known to be the main contributor to open-circuit voltage losses. The relation between open-circuit voltage, dark current, and noise current is demonstrated using four bulk-heterojunction devices based on narrow-gap donor polymers. Their maximum achievable D* is calculated alongside a large set of devices to demonstrate an intrinsic upper limit of D* as a function of the optical gap. It is concluded that OPDs have the potential to be a useful technology up to 2000 nm, given that high external quantum efficiencies can be maintained at these low photon energies.
Intrinsic Detectivity Limits of Organic Near-Infrared Photodetectors / Gielen, S.; Kaiser, C.; Verstraeten, F.; Kublitski, J.; Benduhn, J.; Spoltore, D.; Verstappen, P.; Maes, W.; Meredith, P.; Armin, A.; Vandewal, K.. - In: ADVANCED MATERIALS. - ISSN 0935-9648. - 32:47(2020), p. 2003818.e2003818. [10.1002/adma.202003818]
Intrinsic Detectivity Limits of Organic Near-Infrared Photodetectors
Spoltore D.;
2020-01-01
Abstract
Organic photodetectors (OPDs) with a performance comparable to that of conventional inorganic ones have recently been demonstrated for the visible regime. However, near-infrared photodetection has proven to be challenging and, to date, the true potential of organic semiconductors in this spectral range (800–2500 nm) remains largely unexplored. In this work, it is shown that the main factor limiting the specific detectivity (D*) is non-radiative recombination, which is also known to be the main contributor to open-circuit voltage losses. The relation between open-circuit voltage, dark current, and noise current is demonstrated using four bulk-heterojunction devices based on narrow-gap donor polymers. Their maximum achievable D* is calculated alongside a large set of devices to demonstrate an intrinsic upper limit of D* as a function of the optical gap. It is concluded that OPDs have the potential to be a useful technology up to 2000 nm, given that high external quantum efficiencies can be maintained at these low photon energies.File | Dimensione | Formato | |
---|---|---|---|
Advanced Materials - 2020 - Gielen - Intrinsic Detectivity Limits of Organic Near%E2%80%90Infrared Photodetectors.pdf
accesso aperto
Tipologia:
Versione (PDF) editoriale
Licenza:
Creative commons
Dimensione
1.18 MB
Formato
Adobe PDF
|
1.18 MB | Adobe PDF | Visualizza/Apri |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.