A method to determine the doping induced charge carrier profiles in lightly and moderately doped organic semiconductor thin films is presented. The theory of the method of Charge Extraction by a Linearly Increasing Voltage technique in the doping-induced capacitive regime (doping-CELIV) is extended to the case with non-uniform doping profiles and the analytical description is verified with drift-diffusion simulations. The method is demonstrated experimentally on evaporated organic small- molecule thin films with a controlled doping profile, and solution-processed thin films where the non- uniform doping profile is unintentional, probably induced during the deposition process, and a priori unknown. Furthermore, the method offers a possibility of directly probing charge-density distributions at interfaces between highly doped and lightly doped or undoped layers.

Doping-induced carrier profiles in organic semiconductors determined from capacitive extraction-current transients / Nyman, M; Sandberg, Oj; Dahlstrom, S; Spoltore, D; Korner, C; Zhang, Yd; Barlow, S; Marder, Sr; Leo, K; Vandewal, K; Osterbacka, R. - In: SCIENTIFIC REPORTS. - ISSN 2045-2322. - 7(2017). [10.1038/s41598-017-05499-3]

Doping-induced carrier profiles in organic semiconductors determined from capacitive extraction-current transients

Spoltore D;
2017

Abstract

A method to determine the doping induced charge carrier profiles in lightly and moderately doped organic semiconductor thin films is presented. The theory of the method of Charge Extraction by a Linearly Increasing Voltage technique in the doping-induced capacitive regime (doping-CELIV) is extended to the case with non-uniform doping profiles and the analytical description is verified with drift-diffusion simulations. The method is demonstrated experimentally on evaporated organic small- molecule thin films with a controlled doping profile, and solution-processed thin films where the non- uniform doping profile is unintentional, probably induced during the deposition process, and a priori unknown. Furthermore, the method offers a possibility of directly probing charge-density distributions at interfaces between highly doped and lightly doped or undoped layers.
Doping-induced carrier profiles in organic semiconductors determined from capacitive extraction-current transients / Nyman, M; Sandberg, Oj; Dahlstrom, S; Spoltore, D; Korner, C; Zhang, Yd; Barlow, S; Marder, Sr; Leo, K; Vandewal, K; Osterbacka, R. - In: SCIENTIFIC REPORTS. - ISSN 2045-2322. - 7(2017). [10.1038/s41598-017-05499-3]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11381/2918475
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