Core-shell SiC-SiO2 nanowires were grown on silicon substrate with the chemical vapor deposition method using iron nitrate as promoter for the growth and CO as a carbon precursor, under atmospheric pressure and at a temperature of 1100 degrees C. The whole process involves two main stages: promoter conditioning (dewetting) and growth, by reaction with CO. The dewetting phase has been characterized by SEM and TEM techniques, x-ray diffraction and Raman spectroscopy. The results show that at the operating temperature, a solid-state reaction between the substrate and the promoter takes place with the formation of alpha-FeSi2. The growth of the nanowires begins after an induction time of about 5 min from the introduction of CO. The experimental data have been interpreted by considering a nucleation process involving a reaction between FeSi2 and CO. For the nanowires growth phase, a mechanism based on the Vapor-Liquid-Solid theory is proposed, compatible with the morphology of the drop-shaped particles present on the tip of the nanowires.

Synthesis mechanism of SiC–SiO2 core/shell nanowires grown by chemical vapor deposition / Finetti, F; Cavalli, E; Attolini, G; Rossi, F. - In: NANO EXPRESS. - ISSN 2632-959X. - 1:2(2020), p. 020038. [10.1088/2632-959X/abb47a]

Synthesis mechanism of SiC–SiO2 core/shell nanowires grown by chemical vapor deposition

Cavalli, E;
2020

Abstract

Core-shell SiC-SiO2 nanowires were grown on silicon substrate with the chemical vapor deposition method using iron nitrate as promoter for the growth and CO as a carbon precursor, under atmospheric pressure and at a temperature of 1100 degrees C. The whole process involves two main stages: promoter conditioning (dewetting) and growth, by reaction with CO. The dewetting phase has been characterized by SEM and TEM techniques, x-ray diffraction and Raman spectroscopy. The results show that at the operating temperature, a solid-state reaction between the substrate and the promoter takes place with the formation of alpha-FeSi2. The growth of the nanowires begins after an induction time of about 5 min from the introduction of CO. The experimental data have been interpreted by considering a nucleation process involving a reaction between FeSi2 and CO. For the nanowires growth phase, a mechanism based on the Vapor-Liquid-Solid theory is proposed, compatible with the morphology of the drop-shaped particles present on the tip of the nanowires.
Synthesis mechanism of SiC–SiO2 core/shell nanowires grown by chemical vapor deposition / Finetti, F; Cavalli, E; Attolini, G; Rossi, F. - In: NANO EXPRESS. - ISSN 2632-959X. - 1:2(2020), p. 020038. [10.1088/2632-959X/abb47a]
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11381/2913333
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