X-ray-activated near-infrared luminescent nanoparticles are considered as new alternative optical probes due to being free of autofluorescence, while both their excitation and emission possess a high penetration efficacy in vivo. Herein, we report silicon carbide quantum dot sensitization of trivalent chromium-doped zinc gallate nanoparticles with enhanced near-infrared emission upon X-ray and UV-vis light excitation. We have found that a ZnGa2O4 shell is formed around the SiC nanoparticles during seeded hydrothermal growth, and SiC increases the emission efficiency up to 1 order of magnitude due to band alignment that channels the excited electrons to the chromium ion.

Enhancement of X-ray-Excited Red Luminescence of Chromium-Doped Zinc Gallate via Ultrasmall Silicon Carbide Nanocrystals / Beke, D.; Nardi, M. V.; Bortel, G.; Timpel, M.; Czigany, Z.; Pasquali, L.; Chiappini, A.; Bais, G.; Rudolf, M.; Zalka, D.; Bigi, F.; Rossi, F.; Bencs, L.; Pekker, A.; Markus, B. G.; Salviati, G.; Saddow, S. E.; Kamaras, K.; Simon, F.; Gali, A.. - In: CHEMISTRY OF MATERIALS. - ISSN 0897-4756. - 33:7(2021), pp. 2457-2465. [10.1021/acs.chemmater.0c04671]

Enhancement of X-ray-Excited Red Luminescence of Chromium-Doped Zinc Gallate via Ultrasmall Silicon Carbide Nanocrystals

Bigi F.;
2021

Abstract

X-ray-activated near-infrared luminescent nanoparticles are considered as new alternative optical probes due to being free of autofluorescence, while both their excitation and emission possess a high penetration efficacy in vivo. Herein, we report silicon carbide quantum dot sensitization of trivalent chromium-doped zinc gallate nanoparticles with enhanced near-infrared emission upon X-ray and UV-vis light excitation. We have found that a ZnGa2O4 shell is formed around the SiC nanoparticles during seeded hydrothermal growth, and SiC increases the emission efficiency up to 1 order of magnitude due to band alignment that channels the excited electrons to the chromium ion.
Enhancement of X-ray-Excited Red Luminescence of Chromium-Doped Zinc Gallate via Ultrasmall Silicon Carbide Nanocrystals / Beke, D.; Nardi, M. V.; Bortel, G.; Timpel, M.; Czigany, Z.; Pasquali, L.; Chiappini, A.; Bais, G.; Rudolf, M.; Zalka, D.; Bigi, F.; Rossi, F.; Bencs, L.; Pekker, A.; Markus, B. G.; Salviati, G.; Saddow, S. E.; Kamaras, K.; Simon, F.; Gali, A.. - In: CHEMISTRY OF MATERIALS. - ISSN 0897-4756. - 33:7(2021), pp. 2457-2465. [10.1021/acs.chemmater.0c04671]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11381/2912840
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