Antimony selenide (Sb2Se3) has been developed as attractive, non-toxic and earth-abundant solar absorber candidate among the thin-film photovoltaic devices. The growth of SbxSey thin films, by atmospheric pressure chemical molecular beam deposition (CMBD) method, from separate Sb and Se precursors has been reported. The conductivity of the films was investigated as a function of the vapor phase mixture of Sb and Se. By the precise control of the Sb/Se ratio we succeeded in obtaining stoichiometric Sb2Se3 films. It is also found out that we can control the conductivity by deliberately introducing the deviation from the stoichiometry. The conductivity was varied in the wide range of 10−5 ÷ 102 (Ohm × cm)−1 and samples had p- and n-type conductivity depending on Sb/Se ratio. The obtained results were explained by the formation of intrinsic point defects.
Conductivity of SbxSey films grown by CMBD from Sb and Se precursors for use in solar cells / Razykov, T. M.; Bosio, A.; Ergahsev, B. A.; Isakov, D.; Khurramov, R.; Kouchkarov, K. M.; Romeo, A.; Romeo, N.; Tivanov, M. S.. - In: SOLAR ENERGY. - ISSN 0038-092X. - 230:(2021), pp. 10-12. [10.1016/j.solener.2021.10.012]
Conductivity of SbxSey films grown by CMBD from Sb and Se precursors for use in solar cells
Bosio A.;Romeo N.;
2021-01-01
Abstract
Antimony selenide (Sb2Se3) has been developed as attractive, non-toxic and earth-abundant solar absorber candidate among the thin-film photovoltaic devices. The growth of SbxSey thin films, by atmospheric pressure chemical molecular beam deposition (CMBD) method, from separate Sb and Se precursors has been reported. The conductivity of the films was investigated as a function of the vapor phase mixture of Sb and Se. By the precise control of the Sb/Se ratio we succeeded in obtaining stoichiometric Sb2Se3 films. It is also found out that we can control the conductivity by deliberately introducing the deviation from the stoichiometry. The conductivity was varied in the wide range of 10−5 ÷ 102 (Ohm × cm)−1 and samples had p- and n-type conductivity depending on Sb/Se ratio. The obtained results were explained by the formation of intrinsic point defects.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
