This paper describes a simple approach to the large-scale synthesis of colloidal Si nanocrystals and their processing into spin-on carbon-free nanocrystalline Si films. The synthesized silicon nanoparticles are capped with decene, dispersed in hexane, and deposited on silicon substrates. The deposited films are exposed to nonoxidizing room-temperature He plasma to remove the organic ligands without adversely affecting the silicon nanoparticles to form crack-free thin films. We further show that the reactive ion etching rate in these films is 1.87 times faster than that for single-crystalline Si, consistent with a simple geometric argument that accounts for the nanoscale roughness caused by the nanoparticle shape.
Large-Scale Synthesis of Colloidal Si Nanocrystals and Their Helium Plasma Processing into Spin-On, Carbon-Free Nanocrystalline Si Films / Mohapatra, P; Mendivelso-Perez, D; Bobbitt, JM; Shaw, S; Yuan, B; Tian, XC; Smith, EA; Cademartiri, L. - In: ACS APPLIED MATERIALS & INTERFACES. - ISSN 1944-8244. - 10:24(2018), pp. 20740-20747. [10.1021/acsami.8b03771]
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