ZnxSn1-xSe (x=0) thin films were fabricated by chemical vapor deposition (CVD) using polycrystalline tin selenide (SnSe) precursors. The morphology, structure, optical and electrical properties of films were studied as a function of the composition of precursors and the substrate temperature. Results obtained have shown that Se rich films were fabricated at low substrate temperatures, despite the different compositions of the SnSe precursor during the synthesis. In this case, the grain sizes of the films vary in the range of 8-20 μm, depending on the substrate temperature. X-ray diffraction (XRD) analysis of the samples showed that the films have a orthorhombic crystalline structure. The optical measurements have revealed that the samples have optical bandgap of 1.21 eV and the absorption coefficient of ~10^5 cm-1. The samples performed p-type conductivity being in the range of 10-10^2 (Ohm×cm)^-1 depending on the deposition conditions.
Novel ZnxSn1-xSe Absorber for Use in Thin-Film Solar Cells / Razykov, T. M.; Artegiani, E.; Boltaev, G. S.; Bosio, A.; Ergashev, B.; Kouchkarov, K. M.; Mamarasulov, N. K.; Mavlonov, A. A.; Romeo, A.; Romeo, N.; Yuldoshov, R.. - ELETTRONICO. - (2017), pp. 141-145. (Intervento presentato al convegno 33rd European Photovoltaic Solar Energy Conference and Exhibition tenutosi a Amsterdam nel 25-29 September) [10.4229/EUPVSEC20172017-1CV.3.68].
Novel ZnxSn1-xSe Absorber for Use in Thin-Film Solar Cells
A. Bosio
;N. RomeoMembro del Collaboration Group
;
2017-01-01
Abstract
ZnxSn1-xSe (x=0) thin films were fabricated by chemical vapor deposition (CVD) using polycrystalline tin selenide (SnSe) precursors. The morphology, structure, optical and electrical properties of films were studied as a function of the composition of precursors and the substrate temperature. Results obtained have shown that Se rich films were fabricated at low substrate temperatures, despite the different compositions of the SnSe precursor during the synthesis. In this case, the grain sizes of the films vary in the range of 8-20 μm, depending on the substrate temperature. X-ray diffraction (XRD) analysis of the samples showed that the films have a orthorhombic crystalline structure. The optical measurements have revealed that the samples have optical bandgap of 1.21 eV and the absorption coefficient of ~10^5 cm-1. The samples performed p-type conductivity being in the range of 10-10^2 (Ohm×cm)^-1 depending on the deposition conditions.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
