This paper describes the architecture of a smart temperature sensor designed in CMOS 65nm technology node, intended for IOT and RFID applications. The shift of the trimming circuitry and of a portion of the readout operations into the digital domain, combined with a reduced design complexity in the sensor analog front-end, allow the min- imization of the power consumption. The maximum inaccuracy of the sensor, obtained by means of a two point calibration, is ±0.3o C over the [-40°C÷125°C] temperature range, with an average power consumption of 375 nW at a conversion speed of 1 Sa/s.
A Low Power Temperature Sensor for IOT Applications in CMOS 65nm Technology / Garulli, Nicola; Boni, Andrea; Caselli, Michele; Magnanini, Alessandro; Tonelli, Matteo. - ELETTRONICO. - (2017). (Intervento presentato al convegno 2017 IEEE 7th International Conference on Consumer Electronics - Berlin (ICCE-Berlin) tenutosi a Berlino nel Settembre 2017).
A Low Power Temperature Sensor for IOT Applications in CMOS 65nm Technology
GARULLI, NICOLA;BONI, Andrea;CASELLI, MICHELE;MAGNANINI, Alessandro;TONELLI, Matteo
2017-01-01
Abstract
This paper describes the architecture of a smart temperature sensor designed in CMOS 65nm technology node, intended for IOT and RFID applications. The shift of the trimming circuitry and of a portion of the readout operations into the digital domain, combined with a reduced design complexity in the sensor analog front-end, allow the min- imization of the power consumption. The maximum inaccuracy of the sensor, obtained by means of a two point calibration, is ±0.3o C over the [-40°C÷125°C] temperature range, with an average power consumption of 375 nW at a conversion speed of 1 Sa/s.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
