A simulation study is presented aimed at describing phenomena involved in heavy ion induced SEB of SiC Schottky diode. It is demonstrated that the failure is caused by a strong local increase of the temperature.
Numerical simulation of SEB induced by heavy ions in silicon carbide Schottky diode / Abbate, C.; Busatto, G.; Cova, Paolo; Delmonte, Nicola; Giuliani, Francesco; Iannuzzo, F.; Sanseverino, A.; Velardi, F.. - (2014). (Intervento presentato al convegno IEEE Nuclear and Space Radiation Effects Conference (NSREC) tenutosi a Parigi (France) nel 14-18 luglio 2014).
Numerical simulation of SEB induced by heavy ions in silicon carbide Schottky diode
COVA, Paolo;DELMONTE, Nicola;GIULIANI, Francesco;
2014-01-01
Abstract
A simulation study is presented aimed at describing phenomena involved in heavy ion induced SEB of SiC Schottky diode. It is demonstrated that the failure is caused by a strong local increase of the temperature.File in questo prodotto:
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