This work proposes the design and assembly of a very low inductance half-bridge power switch. It uses latest generation Infineon Technologies® 70μm thin IGBTs and diodes rated at 600 V/175 °C. The integration relies on state-of-the-art ceramic substrate technology, featuring double-etched patterned copper tracks enabling a fully bond-wire-less interconnection scheme; through-hole conducting viases are also present in the ceramic substrates for vertical current conduction, which enables the introduction of a ground-plane structure within the switch, with greatly reduced overall values of parasitic inductance. Moreover, the switch features double-sided cooling. The paper also proposes an outline of system-level integration solutions for ensuring that low-inductance characteristics at switch level are not lost when interconnecting to input filter and load.

Highly integrated low-inductive power switches using double-etched substrates with through-hole viases / Solomon, Adane Kassa; Castellazzi, Alberto; Delmonte, Nicola; Cova, Paolo. - ELETTRONICO. - (2015), pp. 329-332. ((Intervento presentato al convegno IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) tenutosi a Hong Kong nel 10-14 May 2015 [10.1109/ISPSD.2015.7123456].

Highly integrated low-inductive power switches using double-etched substrates with through-hole viases

DELMONTE, Nicola;COVA, Paolo
2015-01-01

Abstract

This work proposes the design and assembly of a very low inductance half-bridge power switch. It uses latest generation Infineon Technologies® 70μm thin IGBTs and diodes rated at 600 V/175 °C. The integration relies on state-of-the-art ceramic substrate technology, featuring double-etched patterned copper tracks enabling a fully bond-wire-less interconnection scheme; through-hole conducting viases are also present in the ceramic substrates for vertical current conduction, which enables the introduction of a ground-plane structure within the switch, with greatly reduced overall values of parasitic inductance. Moreover, the switch features double-sided cooling. The paper also proposes an outline of system-level integration solutions for ensuring that low-inductance characteristics at switch level are not lost when interconnecting to input filter and load.
978-1-4799-6259-4
Highly integrated low-inductive power switches using double-etched substrates with through-hole viases / Solomon, Adane Kassa; Castellazzi, Alberto; Delmonte, Nicola; Cova, Paolo. - ELETTRONICO. - (2015), pp. 329-332. ((Intervento presentato al convegno IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) tenutosi a Hong Kong nel 10-14 May 2015 [10.1109/ISPSD.2015.7123456].
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11381/2795387
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 20
  • ???jsp.display-item.citation.isi??? 18
social impact