Sensitivity and electro-static discharges (ESD) protection level are crucial parameters for any Ultra High-Frequency (UHF) power rectifier–harvester designed for radio-frequency identification (RFID) devices. While sensitivity limits the reading range of the interrogator-to-tag communication link, the requirement for an adequate protection against ESD is enforced in commercial devices connected to a printed antenna. Both resistive and capacitive parasitics of the protection circuits severely affect RF performance of the device. In the paper, a rectifier for UHF RFID embedding an ESD protection for 2 kV human-body discharge model (HBM) level is proposed. The target of a low added parasitic capacitance is achieved by adapting the protection circuit to the RFID rectifier and reusing the ESD clamp for additional functions being mandatory in a UHF RFID front end. The layout of the ESD clamp has been optimized for minimum parasitic resistance without sacrificing the protection level. Two UHF harvesters were implemented in a 180 nm digital complementary metal-oxide semiconductor (CMOS) technology, featuring a minimum sensitivity of −15.5 dBm with an ESD protection level of 2 kV HBM.

900 MHZ radio-frequency identification rectifier with optimization and reusing of electro-static discharges protections in 180 nm digital CMOS technology / Boni, Andrea; Bigi, Marco. - In: INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS. - ISSN 0098-9886. - 43:11(2015), pp. 1655-1677. [10.1002/cta.2033]

900 MHZ radio-frequency identification rectifier with optimization and reusing of electro-static discharges protections in 180 nm digital CMOS technology

BONI, Andrea;Bigi, Marco
2015-01-01

Abstract

Sensitivity and electro-static discharges (ESD) protection level are crucial parameters for any Ultra High-Frequency (UHF) power rectifier–harvester designed for radio-frequency identification (RFID) devices. While sensitivity limits the reading range of the interrogator-to-tag communication link, the requirement for an adequate protection against ESD is enforced in commercial devices connected to a printed antenna. Both resistive and capacitive parasitics of the protection circuits severely affect RF performance of the device. In the paper, a rectifier for UHF RFID embedding an ESD protection for 2 kV human-body discharge model (HBM) level is proposed. The target of a low added parasitic capacitance is achieved by adapting the protection circuit to the RFID rectifier and reusing the ESD clamp for additional functions being mandatory in a UHF RFID front end. The layout of the ESD clamp has been optimized for minimum parasitic resistance without sacrificing the protection level. Two UHF harvesters were implemented in a 180 nm digital complementary metal-oxide semiconductor (CMOS) technology, featuring a minimum sensitivity of −15.5 dBm with an ESD protection level of 2 kV HBM.
900 MHZ radio-frequency identification rectifier with optimization and reusing of electro-static discharges protections in 180 nm digital CMOS technology / Boni, Andrea; Bigi, Marco. - In: INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS. - ISSN 0098-9886. - 43:11(2015), pp. 1655-1677. [10.1002/cta.2033]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11381/2783381
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