A transformerless single-phase PV inverter has been tested with latest generation 650V/ 20A SiC MOSFETs from ROHM. Test results show that the inverter can be operated with high efficiency at high switching frequencies due to high switching and conduction performance of the devices. Results also show that reduction in output filter size, reduced harmonic distortion and increase in power density are enabled by SiC MOSFETs for PV inverters without compromising on the efficiency of the system.
|Titolo:||Performance analysis of UniTL-H6 inverter with SiC MOSFETs2014|
|Autori interni:||CONCARI, Carlo|
|Data di pubblicazione:||2014|
|Appare nelle tipologie:||4.1b Atto convegno Volume|