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EnglishA process for the preparation of a CuInGaSe2 thin film useable as an absorber layer in CulnGaSe2/CdS solar cells, in which said thin film is obtained by sputtering deposition of a Cu-Ga alloy on a CuInSe2 film, deposited on a substrate covered by an Mo film, and subsequent selenization. Before selenization, In2Se3 and Cu are mixed in a vacuum chamber in the absence of Se. The process uses a polycrystalline target for the deposition of In2Se3. This process is suitable for the production - at industrial level - of CdS thin film solar cells in which the absorber layer is constituted by Cu(In1Ga)Se2.
| Titolo: | PROCESS FOR THE PRODUCTION OF Cu(In,Ga)Se2/CdS THIN-FILM SOLAR CELLS |
| Autori: | |
| Data di pubblicazione: | 2011 |
| Abstract: | A process for the preparation of a CuInGaSe2 thin film useable as an absorber layer in CulnGaSe2/CdS solar cells, in which said thin film is obtained by sputtering deposition of a Cu-Ga alloy on a CuInSe2 film, deposited on a substrate covered by an Mo film, and subsequent selenization. Before selenization, In2Se3 and Cu are mixed in a vacuum chamber in the absence of Se. The process uses a polycrystalline target for the deposition of In2Se3. This process is suitable for the production - at industrial level - of CdS thin film solar cells in which the absorber layer is constituted by Cu(In1Ga)Se2. |
| Handle: | http://hdl.handle.net/11381/2734707 |
| Appare nelle tipologie: | 5.1 Brevetto concesso |
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