A process for the preparation of a CuInGaSe2 thin film useable as an absorber layer in CulnGaSe2/CdS solar cells, in which said thin film is obtained by sputtering deposition of a Cu-Ga alloy on a CuInSe2 film, deposited on a substrate covered by an Mo film, and subsequent selenization. Before selenization, In2Se3 and Cu are mixed in a vacuum chamber in the absence of Se. The process uses a polycrystalline target for the deposition of In2Se3. This process is suitable for the production - at industrial level - of CdS thin film solar cells in which the absorber layer is constituted by Cu(In1Ga)Se2.
PROCESS FOR THE PRODUCTION OF Cu(In,Ga)Se2/CdS THIN-FILM SOLAR CELLS / Romeo, Nicola; Bosio, Alessio; Alessandro, Romeo. - ELETTRONICO. - (2011).
PROCESS FOR THE PRODUCTION OF Cu(In,Ga)Se2/CdS THIN-FILM SOLAR CELLS
ROMEO, Nicola;BOSIO, Alessio;
2011-01-01
Abstract
A process for the preparation of a CuInGaSe2 thin film useable as an absorber layer in CulnGaSe2/CdS solar cells, in which said thin film is obtained by sputtering deposition of a Cu-Ga alloy on a CuInSe2 film, deposited on a substrate covered by an Mo film, and subsequent selenization. Before selenization, In2Se3 and Cu are mixed in a vacuum chamber in the absence of Se. The process uses a polycrystalline target for the deposition of In2Se3. This process is suitable for the production - at industrial level - of CdS thin film solar cells in which the absorber layer is constituted by Cu(In1Ga)Se2.| File | Dimensione | Formato | |
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