16.2% efficient Cu(In,Ga)Se2/CdS solar cells were prepared with a process which uses only sputtering and selenization. InSe, GaSe and Cu sputtering targets were used for the preparation of precursors. Selenization was done in a vacuum chamber in which pure Se is evaporated from a graphite crucible. CdS was deposited by sputtering in an atmosphere of Ar containing 3% of CHF3. The process is highly reproducible and it is easily scalable to much larger area substrates. © 2012 Elsevier B.V. All rights reserved.
High efficiency Cu(In,Ga)Se2/CdS thin film solar cells obtained with precursors sputtered from InSe, GaSe and Cu targets / Romeo, Nicola; Bosio, Alessio; Menossi, Daniele; C., Catellani; R., Dharmadasa; A., Romeo. - In: THIN SOLID FILMS. - ISSN 0040-6090. - 535:(2013), pp. 88-91. [10.1016/j.tsf.2012.11.060]
High efficiency Cu(In,Ga)Se2/CdS thin film solar cells obtained with precursors sputtered from InSe, GaSe and Cu targets
ROMEO, Nicola;BOSIO, Alessio;MENOSSI, Daniele;
2013-01-01
Abstract
16.2% efficient Cu(In,Ga)Se2/CdS solar cells were prepared with a process which uses only sputtering and selenization. InSe, GaSe and Cu sputtering targets were used for the preparation of precursors. Selenization was done in a vacuum chamber in which pure Se is evaporated from a graphite crucible. CdS was deposited by sputtering in an atmosphere of Ar containing 3% of CHF3. The process is highly reproducible and it is easily scalable to much larger area substrates. © 2012 Elsevier B.V. All rights reserved.| File | Dimensione | Formato | |
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