An approach to low-cost production of Cu(In,Ga)Se2 (CIGS) solar cells based on pulsed electron deposition (PED) has achieved a crucial milestone. Lab-scale solar cells with efficiencies exceeding 15% were obtained by depositing CIGS from a stoichiometric quaternary target at 270 C and without any post-growth treatment. An effective control of the p-doping level in CIGS was achieved by starting the PED deposition with a layer of NaF tailored to generate the optimum Na diffusion. These results show that PED is a promising technology for the development of a competitive low-cost production process for CIGS solar cells.

15% efficient Cu(In,Ga)Se2 solar cells obtained by low-temperature pulsed electron deposition / S., Rampino; N., Armani; F., Bissoli; M., Bronzoni; D., Calestani; M., Calicchio; Delmonte, Nicola; E., Gilioli; E., Gombia; R., Mosca; L., Nasi; F., Pattini; A., Zappettini; M., Mazzer. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 101:13(2012), pp. 132107-1-132107-4. [10.1063/1.4755772]

15% efficient Cu(In,Ga)Se2 solar cells obtained by low-temperature pulsed electron deposition

DELMONTE, Nicola;
2012-01-01

Abstract

An approach to low-cost production of Cu(In,Ga)Se2 (CIGS) solar cells based on pulsed electron deposition (PED) has achieved a crucial milestone. Lab-scale solar cells with efficiencies exceeding 15% were obtained by depositing CIGS from a stoichiometric quaternary target at 270 C and without any post-growth treatment. An effective control of the p-doping level in CIGS was achieved by starting the PED deposition with a layer of NaF tailored to generate the optimum Na diffusion. These results show that PED is a promising technology for the development of a competitive low-cost production process for CIGS solar cells.
2012
15% efficient Cu(In,Ga)Se2 solar cells obtained by low-temperature pulsed electron deposition / S., Rampino; N., Armani; F., Bissoli; M., Bronzoni; D., Calestani; M., Calicchio; Delmonte, Nicola; E., Gilioli; E., Gombia; R., Mosca; L., Nasi; F., Pattini; A., Zappettini; M., Mazzer. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 101:13(2012), pp. 132107-1-132107-4. [10.1063/1.4755772]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11381/2530247
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