CuGa0.3In0.7Se2 thin films have been grown by selenization of Cu, Ga, In elemental layers in a Se vapour by a novel method in which a first part of the film is prepared by making the substrate temperature to oscillate between 200-230°C and 480-550°C with a risetime of 1-2 minutes and cooling down time of 6-9 minutes. The film is completed by increasing the substrate temperature from 380°C to 480-500°C with a ramp of 1-2°C/min. X-ray spectra and scanning electron micrographs indicate that the films are monophasic and very well crystallized with a strong orientation along the (112) direction. CuGa0.3In0.7Se2/CdS thin film solar cells made on both Corning 7059 or Soda Lime glass substrates exhibit an efficiency larger than 12%
Oscillating Temperature Selenization of Cu, Ga, In Elemental Layers in a Se Vapour / Romeo, Nicola; Bosio, Alessio; Canevari, V; Tedeschi, Riccardo Alfredo Arturo. - STAMPA. - I:(1994), pp. 176-178. (Intervento presentato al convegno IEEE First World Conference on Photovoltaic Energy Conversion tenutosi a Waikoloa, HI nel 5-9 December, 1994).
Oscillating Temperature Selenization of Cu, Ga, In Elemental Layers in a Se Vapour
ROMEO, Nicola;BOSIO, Alessio;TEDESCHI, Riccardo Alfredo Arturo
1994-01-01
Abstract
CuGa0.3In0.7Se2 thin films have been grown by selenization of Cu, Ga, In elemental layers in a Se vapour by a novel method in which a first part of the film is prepared by making the substrate temperature to oscillate between 200-230°C and 480-550°C with a risetime of 1-2 minutes and cooling down time of 6-9 minutes. The film is completed by increasing the substrate temperature from 380°C to 480-500°C with a ramp of 1-2°C/min. X-ray spectra and scanning electron micrographs indicate that the films are monophasic and very well crystallized with a strong orientation along the (112) direction. CuGa0.3In0.7Se2/CdS thin film solar cells made on both Corning 7059 or Soda Lime glass substrates exhibit an efficiency larger than 12%File | Dimensione | Formato | |
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