CdTe thin films deposited by evaporation on a Cu-Mo covered glass substrate have been treated vithCdCl2 at a temperature of 400-600°C in an argon flow. The dependence of the CdTe thin film grain size on CdCl2 thickness, substrate temperature and argon flux has been studied. By controlling these parameters, CdTe films with a grain size larger than 20 μm can be reproducibly obtained. CdTe/CdS back-wall thin film solar cell prepared by using the CdCl2-treated CdTe films exhibit conversion efficiency larger than 10%.
Crystallization of CdTe Thin Films by CdCl2 Treatment at High Temperature / Romeo, Nicola; Bosio, Alessio; Canevari V, Kuku T. A.. - STAMPA. - 1:(1994), pp. 662-663. (Intervento presentato al convegno 12th E.C. Photovoltaic Solar Energy Conference tenutosi a Amsterdam, The Netherlands. nel 11-15 April, 1994).
Crystallization of CdTe Thin Films by CdCl2 Treatment at High Temperature
ROMEO, Nicola;BOSIO, Alessio;
1994-01-01
Abstract
CdTe thin films deposited by evaporation on a Cu-Mo covered glass substrate have been treated vithCdCl2 at a temperature of 400-600°C in an argon flow. The dependence of the CdTe thin film grain size on CdCl2 thickness, substrate temperature and argon flux has been studied. By controlling these parameters, CdTe films with a grain size larger than 20 μm can be reproducibly obtained. CdTe/CdS back-wall thin film solar cell prepared by using the CdCl2-treated CdTe films exhibit conversion efficiency larger than 10%.| File | Dimensione | Formato | |
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