CuGaInSe2 thin films nave been grown by selenizing the Cu, Ga, In elemental layers in a Se vapor. The main characteristic of the process consists in the fact that the first part of the film is grown with the substrate temperature oscillating between 200-230°C and 400-500°C. These films have been used to fabricate CuGalnSe2CdS solar cells with conversion efficiency close to 12%.
CuGaInSe2 Thin Film Grown by Selenization of Metallic Elemental Layers in a Se Vapour / Romeo, Nicola; Bosio, Alessio; V., Canevari. - STAMPA. - II:(1994), pp. 608-609. (Intervento presentato al convegno 12th E.C. Photovoltaic Solar Energy Conference tenutosi a Amsterdam, The Netherlands nel 11-15 April 1994).
CuGaInSe2 Thin Film Grown by Selenization of Metallic Elemental Layers in a Se Vapour
ROMEO, Nicola;BOSIO, Alessio;
1994-01-01
Abstract
CuGaInSe2 thin films nave been grown by selenizing the Cu, Ga, In elemental layers in a Se vapor. The main characteristic of the process consists in the fact that the first part of the film is grown with the substrate temperature oscillating between 200-230°C and 400-500°C. These films have been used to fabricate CuGalnSe2CdS solar cells with conversion efficiency close to 12%.| File | Dimensione | Formato | |
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