CuInSe2/CdS thin film solar cells with an efficiency over 8% bave been prepared with a method in which all the layers are deposited by sputtering. The device quality polycrystalline CuInSe2 films are obtained by means of a reaction of Cu and In elemental layers in a Se-atmosphere at a temperature of 400-450°C.
Titolo: | CuInSe2/CdS Thin Film Solar Cells by Sputtering and Rapid Thermal Annealing in a Selenium Atmosphere |
Autori: | |
Data di pubblicazione: | 1990 |
Abstract: | CuInSe2/CdS thin film solar cells with an efficiency over 8% bave been prepared with a method in which all the layers are deposited by sputtering. The device quality polycrystalline CuInSe2 films are obtained by means of a reaction of Cu and In elemental layers in a Se-atmosphere at a temperature of 400-450°C. |
Handle: | http://hdl.handle.net/11381/2469436 |
Appare nelle tipologie: | 4.1b Atto convegno Volume |
File in questo prodotto:
File | Descrizione | Tipologia | Licenza | |
---|---|---|---|---|
Proc-74.pdf | Documento in Post-print | ![]() | Administrator Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.