CuInSe2/CdS thin film solar cells with an efficiency over 8% bave been prepared with a method in which all the layers are deposited by sputtering. The device quality polycrystalline CuInSe2 films are obtained by means of a reaction of Cu and In elemental layers in a Se-atmosphere at a temperature of 400-450°C.
CuInSe2/CdS Thin Film Solar Cells by Sputtering and Rapid Thermal Annealing in a Selenium Atmosphere / Romeo, Nicola; Bosio, Alessio; Canevari, V; Zanotti, L.. - STAMPA. - II:(1990), pp. 58-63. (Intervento presentato al convegno 8th International Conference on Ternary and Multinary Compounds tenutosi a Kishinev nel September 11-14, 1990).
CuInSe2/CdS Thin Film Solar Cells by Sputtering and Rapid Thermal Annealing in a Selenium Atmosphere
ROMEO, Nicola;BOSIO, Alessio;
1990-01-01
Abstract
CuInSe2/CdS thin film solar cells with an efficiency over 8% bave been prepared with a method in which all the layers are deposited by sputtering. The device quality polycrystalline CuInSe2 films are obtained by means of a reaction of Cu and In elemental layers in a Se-atmosphere at a temperature of 400-450°C.| File | Dimensione | Formato | |
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