Low resistivity (10÷1 - Ω cm) CdS thin films were deposited onto glass substrates by r.f. sputtering in an Ar-H2 atmosphere at substrate temperatures in the range 100–200 °C. These films are highly transparent in the wavelength region between 1.6 μm and the absorption edge of CdS (0.52 μm) and are therefore suitable to be used as windows in heterojunction solar cells such as CuInSe2/CdS or CdTe/CdS. Hall mobilities of such films on glass substrates are of the order of 10–20 V/cm2 s.
Low resistivity CdS thin films grown by r.f. sputtering in an Ar-H2 atmosphere / Romeo, Nicola; Bosio, Alessio; Canevari, V; Seuret, D.. - In: SOLAR CELLS. - ISSN 0379-6787. - 22:1(1987), pp. 23-27. [10.1016/0379-6787(87)90067-6]
Low resistivity CdS thin films grown by r.f. sputtering in an Ar-H2 atmosphere
ROMEO, Nicola;BOSIO, Alessio;
1987-01-01
Abstract
Low resistivity (10÷1 - Ω cm) CdS thin films were deposited onto glass substrates by r.f. sputtering in an Ar-H2 atmosphere at substrate temperatures in the range 100–200 °C. These films are highly transparent in the wavelength region between 1.6 μm and the absorption edge of CdS (0.52 μm) and are therefore suitable to be used as windows in heterojunction solar cells such as CuInSe2/CdS or CdTe/CdS. Hall mobilities of such films on glass substrates are of the order of 10–20 V/cm2 s.| File | Dimensione | Formato | |
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