Evaporation of Cd and Te from separate crucibles onto heated glass substrates was used for preparayion of p-type CdTe films with a resistivity of ≈ 10 exp(2) Ω-cm; p-type doping was obtained by directing neutral, high-energy N atoms from an atomic gun to the substrate during film growth. The best optical and resistivity properties were obtained when the substrate temperature was kept at 350° and the ratio between the fluxes of Cd and Te was >2.0. Back-wall CdS/CdTe thin-film solar cells prepared on Ni-covered glass substrates have an energy collection efficiency of ≈ 5% without an antireflecting coating.
P-type cadmium telluride thin films doped during growth by neutral high energy nitrogen atoms / Romeo, Nicola; Bosio, Alessio; Canevari, V; Spaggiari, C; Zini, L.. - In: SOLAR CELLS. - ISSN 0379-6787. - 26:3(1989), pp. 189-195. [10.1016/0379-6787(89)90080-X]
P-type cadmium telluride thin films doped during growth by neutral high energy nitrogen atoms
ROMEO, Nicola;BOSIO, Alessio;
1989-01-01
Abstract
Evaporation of Cd and Te from separate crucibles onto heated glass substrates was used for preparayion of p-type CdTe films with a resistivity of ≈ 10 exp(2) Ω-cm; p-type doping was obtained by directing neutral, high-energy N atoms from an atomic gun to the substrate during film growth. The best optical and resistivity properties were obtained when the substrate temperature was kept at 350° and the ratio between the fluxes of Cd and Te was >2.0. Back-wall CdS/CdTe thin-film solar cells prepared on Ni-covered glass substrates have an energy collection efficiency of ≈ 5% without an antireflecting coating.| File | Dimensione | Formato | |
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