A method of forming a non-rectifying, ohmic contact on a p-type semiconductor CdTe thin film, which comprises the steps of depositing a layer of As2Te3 on a CdTe layer at a substrate temperature generally within a range of ambient temperature and 200° C.; depositing a layer of Cu on the As2Te3 layer; and bringing at least the deposited Cu layer to a temperature generally within a range of 150° C. and 250° C. The method is used to form a stable contact on CdTe/CdS thin film solar c

METHOD FOR THE FORMATION OF A NON-RECTIFYING BACK-CONTACT IN A CDTE/CDS THIN FILM SOLAR CELL / Romeo, Nicola; Bosio, Alessio; A., Romeo. - (2007).

METHOD FOR THE FORMATION OF A NON-RECTIFYING BACK-CONTACT IN A CDTE/CDS THIN FILM SOLAR CELL

ROMEO, Nicola
Membro del Collaboration Group
;
BOSIO, Alessio
Conceptualization
;
2007-01-01

Abstract

A method of forming a non-rectifying, ohmic contact on a p-type semiconductor CdTe thin film, which comprises the steps of depositing a layer of As2Te3 on a CdTe layer at a substrate temperature generally within a range of ambient temperature and 200° C.; depositing a layer of Cu on the As2Te3 layer; and bringing at least the deposited Cu layer to a temperature generally within a range of 150° C. and 250° C. The method is used to form a stable contact on CdTe/CdS thin film solar c
2007
METHOD FOR THE FORMATION OF A NON-RECTIFYING BACK-CONTACT IN A CDTE/CDS THIN FILM SOLAR CELL / Romeo, Nicola; Bosio, Alessio; A., Romeo. - (2007).
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11381/2441221
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact