A method of forming a non-rectifying, ohmic contact on a p-type semiconductor CdTe thin film, which comprises the steps of depositing a layer of As2Te3 on a CdTe layer at a substrate temperature generally within a range of ambient temperature and 200° C.; depositing a layer of Cu on the As2Te3 layer; and bringing at least the deposited Cu layer to a temperature generally within a range of 150° C. and 250° C. The method is used to form a stable contact on CdTe/CdS thin film solar c
METHOD FOR THE FORMATION OF A NON-RECTIFYING BACK-CONTACT IN A CDTE/CDS THIN FILM SOLAR CELL / Romeo, Nicola; Bosio, Alessio; A., Romeo. - (2007).
METHOD FOR THE FORMATION OF A NON-RECTIFYING BACK-CONTACT IN A CDTE/CDS THIN FILM SOLAR CELL
ROMEO, NicolaMembro del Collaboration Group
;BOSIO, AlessioConceptualization
;
2007-01-01
Abstract
A method of forming a non-rectifying, ohmic contact on a p-type semiconductor CdTe thin film, which comprises the steps of depositing a layer of As2Te3 on a CdTe layer at a substrate temperature generally within a range of ambient temperature and 200° C.; depositing a layer of Cu on the As2Te3 layer; and bringing at least the deposited Cu layer to a temperature generally within a range of 150° C. and 250° C. The method is used to form a stable contact on CdTe/CdS thin film solar cFile in questo prodotto:
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