A process for the large-scale production of CdTe/CdS thin film solar cells, said films being deposited as a sequence on a transparent substrate, comprising the steps 5 of: depositing a film of a transparent conductive oxide (TCO) on said substrate; depositing a film of CdS on said TCO film; depositing a film of CdTe on said CdS film; treating said CdTe film with CdCl2; depositing a back-contact film on said treated CdTe film. The treatment 10 of the CdTe film with CdCl2 comprises the following steps: forming a layer of CdCl2 on the CdTe film by evaporation, while keeping the substrate at room temperature; annealing said CdCl2 layer in a vacuum chamber at 380-420°C and 300-1000 mbar under inert gas atmosphere; removing the inert gas from said chamber to produce vacuum condition, while the substrate is kept to a temperature of 350-420°C whereby any residual CdCl2 is evaporated from the CdTe film surface.
A PROCESs FOR LARGE-SCALE PRODUCTION OF CDTE/CDS THNI FLIM SOLAR CELLS / Romeo, Nicola; Bosio, Alessio; A., Romeo. - (2002).
A PROCESs FOR LARGE-SCALE PRODUCTION OF CDTE/CDS THNI FLIM SOLAR CELLS
ROMEO, NicolaMembro del Collaboration Group
;BOSIO, AlessioConceptualization
;
2002-01-01
Abstract
A process for the large-scale production of CdTe/CdS thin film solar cells, said films being deposited as a sequence on a transparent substrate, comprising the steps 5 of: depositing a film of a transparent conductive oxide (TCO) on said substrate; depositing a film of CdS on said TCO film; depositing a film of CdTe on said CdS film; treating said CdTe film with CdCl2; depositing a back-contact film on said treated CdTe film. The treatment 10 of the CdTe film with CdCl2 comprises the following steps: forming a layer of CdCl2 on the CdTe film by evaporation, while keeping the substrate at room temperature; annealing said CdCl2 layer in a vacuum chamber at 380-420°C and 300-1000 mbar under inert gas atmosphere; removing the inert gas from said chamber to produce vacuum condition, while the substrate is kept to a temperature of 350-420°C whereby any residual CdCl2 is evaporated from the CdTe film surface.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
