We present the use of Reflectance Anisotropy Spectroscopy (RAS) as a probe to study the deposition of organics We started the study of ordered layers deposited onto disordered substrates by Langmuir-Blodgett (LB) and Langmuir-Schaefer (LS) techniques, nevertheless we believe that the goal is the application of RAS to OMBE (Organic Molecular Beam Epitaxy), to monitor the growth process in real time and in situ, similarly to the deposition of inorganic semiconductors. After a short introduction, we discuss an example testing the RAS sensitivity to the structure of the growing layers: in particular, we report recent data about the polarization dependence of the optical reflectivity for LS PdC10OAP porphyrin layers. Deposition has been carried out at two values of the surface pressure (Π1=30 mN/m; Π2=10 mN/m), corresponding to different layer structures. The RAS spectra measured in two cases are successfully explained in terms of the particular morphological characteristics of the layer.
|Titolo:||The application of reflectance anisotropy spectroscopy to organics deposition|
|Data di pubblicazione:||2004|
|Appare nelle tipologie:||4.1b Atto convegno Volume|