We present a bond-charge-model slab calculation for the surface dynamics of GaAs(110), which represents an example of an open surface with unsaturated dangling bands. The comparison to previously reported and some new He inelastic-scattering data for the low-frequency region provides information on the surface geometry.
DYNAMICS AND STRUCTURAL ASSESSMENT OF OPEN SEMICONDUCTOR SURFACES - GAAS(110) / Santini, Paolo; L., Miglio; G., Benedek; U., Harten; P., Ruggerone; J. P., Toennies. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - 42:(1990), pp. 11942-11945. [10.1103/PhysRevB.42.11942]
DYNAMICS AND STRUCTURAL ASSESSMENT OF OPEN SEMICONDUCTOR SURFACES - GAAS(110)
SANTINI, Paolo;
1990-01-01
Abstract
We present a bond-charge-model slab calculation for the surface dynamics of GaAs(110), which represents an example of an open surface with unsaturated dangling bands. The comparison to previously reported and some new He inelastic-scattering data for the low-frequency region provides information on the surface geometry.File in questo prodotto:
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