We compare the surface phonon dispersion curves of GaAs(110) and Ge(111)2 x 1 as calculated by the Bond Charge Model. The atomic masses, bulk force constants and crystallography of the topmost layer are nearly equal, still the substrate orientation and charge distributions are different. Similarities and discrepancies in the surface phonon dispersion curves are investigated as fingerprints of the structure configuration.
SURFACE PHONON-DISPERSION CURVES IN GAAS(110) AND GE(111)2X1 - A CRITICAL COMPARISON / Santini, Paolo; L., Miglio; G., Benedek; P., Ruggerone. - In: SURFACE SCIENCE. - ISSN 0039-6028. - 241:(1991), pp. 346-352. [10.1016/0039-6028(91)90094-9]
SURFACE PHONON-DISPERSION CURVES IN GAAS(110) AND GE(111)2X1 - A CRITICAL COMPARISON
SANTINI, Paolo;
1991-01-01
Abstract
We compare the surface phonon dispersion curves of GaAs(110) and Ge(111)2 x 1 as calculated by the Bond Charge Model. The atomic masses, bulk force constants and crystallography of the topmost layer are nearly equal, still the substrate orientation and charge distributions are different. Similarities and discrepancies in the surface phonon dispersion curves are investigated as fingerprints of the structure configuration.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
