In this paper we describe a vacuum evaporation deposition process where the substrate temperature does not exceed 450°C and we study a recrystallization process which avoids the use of CdCl2, which is a carcinogenic material, compared with the standard procedure. In our process CdS and CdTe are deposited at pressures of 10-6 mbar in the same chamber by thermal evaporation and with substrate temperature of 150°C and 340°C, respectively. The CdTe/CdS/TCO stacks are then put in a quartz chamber and, after having previously pumped the chamber down to 10-5 mbar, a controlled mixture of argon and chlorine containing gas are fluxed with a substrate temperature in a range between 400°C and 450°C. The morphological properties of the single layers are studied by X-ray diffraction (XRD), atomic force microscopy (AFM) and the electrical properties of the finished devices will be presented by means of current-voltage (I-V) measurements.
LOW SUBSTRATE TEMPERATURE DEPOSITED CdTe SOLAR CELLS WITH AN ALTERNATIVE RECRYSTALLIZATION PROCESS / A., Salavei; I., Rimmaudo; F., Piccinelli; V., Allodi; A., Romeo; Bosio, Alessio; Romeo, Nicola; Mazzamuto, Samantha; Menossi, Daniele. - (2011), pp. 3030-3034. (Intervento presentato al convegno 26th European Photovoltaic Solar Energy Conference and Exhibition tenutosi a CCH Congress Centre and International Fair Hamburg, Germany nel 5-9 Settembre 2011).
LOW SUBSTRATE TEMPERATURE DEPOSITED CdTe SOLAR CELLS WITH AN ALTERNATIVE RECRYSTALLIZATION PROCESS
BOSIO, Alessio;ROMEO, Nicola;MAZZAMUTO, Samantha;MENOSSI, Daniele
2011-01-01
Abstract
In this paper we describe a vacuum evaporation deposition process where the substrate temperature does not exceed 450°C and we study a recrystallization process which avoids the use of CdCl2, which is a carcinogenic material, compared with the standard procedure. In our process CdS and CdTe are deposited at pressures of 10-6 mbar in the same chamber by thermal evaporation and with substrate temperature of 150°C and 340°C, respectively. The CdTe/CdS/TCO stacks are then put in a quartz chamber and, after having previously pumped the chamber down to 10-5 mbar, a controlled mixture of argon and chlorine containing gas are fluxed with a substrate temperature in a range between 400°C and 450°C. The morphological properties of the single layers are studied by X-ray diffraction (XRD), atomic force microscopy (AFM) and the electrical properties of the finished devices will be presented by means of current-voltage (I-V) measurements.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
