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EnglishIn this paper we describe a vacuum evaporation deposition process where the substrate temperature does not exceed 450°C and we study a recrystallization process which avoids the use of CdCl2, which is a carcinogenic material, compared with the standard procedure. In our process CdS and CdTe are deposited at pressures of 10-6 mbar in the same chamber by thermal evaporation and with substrate temperature of 150°C and 340°C, respectively. The CdTe/CdS/TCO stacks are then put in a quartz chamber and, after having previously pumped the chamber down to 10-5 mbar, a controlled mixture of argon and chlorine containing gas are fluxed with a substrate temperature in a range between 400°C and 450°C. The morphological properties of the single layers are studied by X-ray diffraction (XRD), atomic force microscopy (AFM) and the electrical properties of the finished devices will be presented by means of current-voltage (I-V) measurements.
LOW SUBSTRATE TEMPERATURE DEPOSITED CdTe SOLAR CELLS WITH AN ALTERNATIVE RECRYSTALLIZATION PROCESS / A.Salavei; I. Rimmaudo; F. Piccinelli; V. Allodi; A. Romeo; A.Bosio; N.Romeo; S. Mazzamuto; D. Menossi. - (2011), pp. 3030-3034. ((Intervento presentato al convegno 26th European Photovoltaic Solar Energy Conference and Exhibition tenutosi a CCH Congress Centre and International Fair Hamburg, Germany nel 5-9 Settembre 2011.
| Titolo: | LOW SUBSTRATE TEMPERATURE DEPOSITED CdTe SOLAR CELLS WITH AN ALTERNATIVE RECRYSTALLIZATION PROCESS | |
| Autori: | ||
| Data di pubblicazione: | 2011 | |
| Citazione: | LOW SUBSTRATE TEMPERATURE DEPOSITED CdTe SOLAR CELLS WITH AN ALTERNATIVE RECRYSTALLIZATION PROCESS / A.Salavei; I. Rimmaudo; F. Piccinelli; V. Allodi; A. Romeo; A.Bosio; N.Romeo; S. Mazzamuto; D. Menossi. - (2011), pp. 3030-3034. ((Intervento presentato al convegno 26th European Photovoltaic Solar Energy Conference and Exhibition tenutosi a CCH Congress Centre and International Fair Hamburg, Germany nel 5-9 Settembre 2011. | |
| Abstract: | In this paper we describe a vacuum evaporation deposition process where the substrate temperature does not exceed 450°C and we study a recrystallization process which avoids the use of CdCl2, which is a carcinogenic material, compared with the standard procedure. In our process CdS and CdTe are deposited at pressures of 10-6 mbar in the same chamber by thermal evaporation and with substrate temperature of 150°C and 340°C, respectively. The CdTe/CdS/TCO stacks are then put in a quartz chamber and, after having previously pumped the chamber down to 10-5 mbar, a controlled mixture of argon and chlorine containing gas are fluxed with a substrate temperature in a range between 400°C and 450°C. The morphological properties of the single layers are studied by X-ray diffraction (XRD), atomic force microscopy (AFM) and the electrical properties of the finished devices will be presented by means of current-voltage (I-V) measurements. | |
| Handle: | http://hdl.handle.net/11381/2363546 | |
| ISBN: | 9783936338270 | |
| Appare nelle tipologie: | 4.1b Atto convegno Volume |
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