We present a simulation tool based on the Multicanonical Monte Carlo (MMC) method to characterize the statistical properties of bit patterning in semiconductor optical amplifiers (SOAs). Our tool estimates the conditional probability density functions (PDFs) of marks and spaces of the received signal. We introduce an experimental technique to directly measure the conditional PDFs of the received marks and spaces using a high bandwidth sampling scope. We demonstrate that predictions from our simulation tool match the experimental data. We measure the bit error rate (BER) of a SOA-based preamplified receiver, where the SOA operates in the nonlinear regime, and demonstrate that our simulation tool can predict the measured BER.

Bit Patterning in SOAs: Statistical Characterization through Multicanonical Monte Carlo Simulations / A., Ghazisaeidi; F., Vacondio; Bononi, Alberto; L. A., Rusch. - In: IEEE JOURNAL OF QUANTUM ELECTRONICS. - ISSN 0018-9197. - 46:(2010), pp. 570-578. [10.1109/JQE.2009.2029545]

Bit Patterning in SOAs: Statistical Characterization through Multicanonical Monte Carlo Simulations

BONONI, Alberto;
2010-01-01

Abstract

We present a simulation tool based on the Multicanonical Monte Carlo (MMC) method to characterize the statistical properties of bit patterning in semiconductor optical amplifiers (SOAs). Our tool estimates the conditional probability density functions (PDFs) of marks and spaces of the received signal. We introduce an experimental technique to directly measure the conditional PDFs of the received marks and spaces using a high bandwidth sampling scope. We demonstrate that predictions from our simulation tool match the experimental data. We measure the bit error rate (BER) of a SOA-based preamplified receiver, where the SOA operates in the nonlinear regime, and demonstrate that our simulation tool can predict the measured BER.
2010
Bit Patterning in SOAs: Statistical Characterization through Multicanonical Monte Carlo Simulations / A., Ghazisaeidi; F., Vacondio; Bononi, Alberto; L. A., Rusch. - In: IEEE JOURNAL OF QUANTUM ELECTRONICS. - ISSN 0018-9197. - 46:(2010), pp. 570-578. [10.1109/JQE.2009.2029545]
File in questo prodotto:
File Dimensione Formato  
GVBR_jqe_10.pdf

non disponibili

Tipologia: Documento in Post-print
Licenza: Creative commons
Dimensione 1.45 MB
Formato Adobe PDF
1.45 MB Adobe PDF   Visualizza/Apri   Richiedi una copia

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11381/2350792
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 7
  • ???jsp.display-item.citation.isi??? 4
social impact