Abstract: CuInGaSe2/CdS thin film solar cells were prepared by using a novel precursor obtained by depositing in sequence, on top of a Mo covered soda lime glass, In2Se3, Ga2Se3 and Cu. A subsequent few minutes selenization of the precursor in a selenium vapor is sufficient to obtain a good quality CuInGaSe2 film. Solar cells were obtained by depositing in sequence on top of the CuInGaSe2 film, 60nm of CdS, 80nm of pure ZnO and 500nm of ITO. All the layers that compose the cell, namely Mo, In2Se3, Ga2Se3, Cu, CdS, ZnO and ITO were prepared by sputtering. In particular, R.F. sputtering was used to deposit In2Se3, Ga2Se3, CdS and ZnO, while D.C. pulsed sputtering was used to deposit Mo, Cu and ITO. Efficiencies between 12 and 14% can be routinely obtained with this process. Since only sputtering and selenization, that are easily scalable, are used, we believe that this process can be used for applications at an industrial level. © 2010 IEEE.
CIGS thin films prepared by sputtering and selenization by using In 2Se3, Ga2Se3 and Cu as sputtering targets / Romeo, Nicola; Bosio, Alessio; Mazzamuto, Samantha; Menossi, Daniele; Romeo, A.. - 5617109:(2010), pp. 786-788. (Intervento presentato al convegno 35th IEEE Photovoltaic Specialists Conference, PVSC 2010 tenutosi a Honolulu, Hawai nel 20 - 25 June 2010).
CIGS thin films prepared by sputtering and selenization by using In 2Se3, Ga2Se3 and Cu as sputtering targets
ROMEO, Nicola;BOSIO, Alessio;MAZZAMUTO, Samantha;MENOSSI, Daniele;
2010-01-01
Abstract
Abstract: CuInGaSe2/CdS thin film solar cells were prepared by using a novel precursor obtained by depositing in sequence, on top of a Mo covered soda lime glass, In2Se3, Ga2Se3 and Cu. A subsequent few minutes selenization of the precursor in a selenium vapor is sufficient to obtain a good quality CuInGaSe2 film. Solar cells were obtained by depositing in sequence on top of the CuInGaSe2 film, 60nm of CdS, 80nm of pure ZnO and 500nm of ITO. All the layers that compose the cell, namely Mo, In2Se3, Ga2Se3, Cu, CdS, ZnO and ITO were prepared by sputtering. In particular, R.F. sputtering was used to deposit In2Se3, Ga2Se3, CdS and ZnO, while D.C. pulsed sputtering was used to deposit Mo, Cu and ITO. Efficiencies between 12 and 14% can be routinely obtained with this process. Since only sputtering and selenization, that are easily scalable, are used, we believe that this process can be used for applications at an industrial level. © 2010 IEEE.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
