In this paper, we propose different procedures to extract the statistical distribution of the thermal cycles suffered by power devices submitted to arbitrary mission profiles and we discuss the different lifetimes predicted by them under the assumption of linear accumulation of the damage produced by low cycling fatigue. Furthermore, we introduce a novel prediction procedure, which is based on some fundamental equations, which take into consideration the creep experienced by compliant materials when they are submitted to thermal cycles.

A novel thermomechanics-based lifetime prediction model for cycle fatigue failure mechanisms in power semiconductors / M. CIAPPA; F. CARBOGNANI; COVA P.; W. FICHTNER. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 42(2002), pp. 1653-1658. [10.1016/S0026-2714(02)00206-8]

A novel thermomechanics-based lifetime prediction model for cycle fatigue failure mechanisms in power semiconductors

COVA, Paolo;
2002

Abstract

In this paper, we propose different procedures to extract the statistical distribution of the thermal cycles suffered by power devices submitted to arbitrary mission profiles and we discuss the different lifetimes predicted by them under the assumption of linear accumulation of the damage produced by low cycling fatigue. Furthermore, we introduce a novel prediction procedure, which is based on some fundamental equations, which take into consideration the creep experienced by compliant materials when they are submitted to thermal cycles.
A novel thermomechanics-based lifetime prediction model for cycle fatigue failure mechanisms in power semiconductors / M. CIAPPA; F. CARBOGNANI; COVA P.; W. FICHTNER. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 42(2002), pp. 1653-1658. [10.1016/S0026-2714(02)00206-8]
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11381/2298183
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