A novel precursor suitable to prepare uniform CuInGaSe2 thin films on an 1 inch2 area has been developed. The precursor is obtained by depositing in sequence In2Se3, Cu and Ga on a Mo covered glass and by a subsequent annealing at 400°C in vacuum for 1-2 hours. By selenizing this precursor in a Se-flux in vacuum for half an hour at 500°C substrate temperature a uniform and well crystallized CuInGaSe2 film is obtained. Solar cells prepared by depositing in sequence on top of the CuInGaSe2 film 60 nm of CdS, 100 nm of pure ZnO and 2 μm of ZnO:Al exhibit a uniform efficiency of 14,5% over the 1 inch2 area.
Development of a novel precursor for the preparation by selenization of high efficiency CuInGaSe2/CdS thin film solar cells / Romeo, Nicola; Bosio, Alessio; V., Canevari; Tedeschi, Riccardo Alfredo Arturo; S., Sivelli; A., Romeo; F. V., Kurdesau. - CD-ROM. - 1:(2004), pp. 1796-1798. (Intervento presentato al convegno 19th European Photovoltaic Solar Energy Conference, Paris, 7-11 June 2004 tenutosi a Parigi nel June 2004).
Development of a novel precursor for the preparation by selenization of high efficiency CuInGaSe2/CdS thin film solar cells
ROMEO, Nicola
Membro del Collaboration Group
;BOSIO, AlessioValidation
;TEDESCHI, Riccardo Alfredo ArturoMembro del Collaboration Group
;
2004-01-01
Abstract
A novel precursor suitable to prepare uniform CuInGaSe2 thin films on an 1 inch2 area has been developed. The precursor is obtained by depositing in sequence In2Se3, Cu and Ga on a Mo covered glass and by a subsequent annealing at 400°C in vacuum for 1-2 hours. By selenizing this precursor in a Se-flux in vacuum for half an hour at 500°C substrate temperature a uniform and well crystallized CuInGaSe2 film is obtained. Solar cells prepared by depositing in sequence on top of the CuInGaSe2 film 60 nm of CdS, 100 nm of pure ZnO and 2 μm of ZnO:Al exhibit a uniform efficiency of 14,5% over the 1 inch2 area.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
