Numerical simulations of semiconductor optical amplifiers (SOA) often are time consuming. Making simplifying assumptions, we obtain a fast model based on the reservoir , representing the total number of useful carriers. In this paper, we explain how this model is developed and how the gain is parameterized. We demonstrate that the scattering losses, dropped in the derivation of the reservoir model, can be re-introduced by applying a simple transformation to the gain coefficient. In this way, the accuracy of the model is greatly increased, but its level of complexity remains low.
New gain parametrization for fast semiconductor optical amplifier model / P., Lemieux; W., Mathlouthi; Salsi, Massimiliano; L. A., Rusch; Vannucci, Armando; Bononi, Alberto. - 6343:(2006), pp. 42.1-42.11. (Intervento presentato al convegno 2006 International Conference on Applications of Photonic Technology (Photonics North) tenutosi a Quebec City (Quebec, Canada) nel June 5-8, 2006) [10.1117/12.707921].
New gain parametrization for fast semiconductor optical amplifier model
SALSI, Massimiliano;VANNUCCI, Armando;BONONI, Alberto
2006-01-01
Abstract
Numerical simulations of semiconductor optical amplifiers (SOA) often are time consuming. Making simplifying assumptions, we obtain a fast model based on the reservoir , representing the total number of useful carriers. In this paper, we explain how this model is developed and how the gain is parameterized. We demonstrate that the scattering losses, dropped in the derivation of the reservoir model, can be re-introduced by applying a simple transformation to the gain coefficient. In this way, the accuracy of the model is greatly increased, but its level of complexity remains low.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
