Commercial pseudomorphic AlGaAs/InGaAs HEMTs designed for low noise operation have demonstrated weak sensitivity to hot electron stress. We have investigated underlying physical mechanisms by LF channel noise analysis and Drain Current Transient Spectroscopy (DCTS). A link has been established between the enhancement due to hot electron stress of the hole current collected by the gate and the modulation of electron trap effective density located beneath the gate.
Analysis of hot electron degradations in pseudomorphic HEMTs by DCTS and LF noise characterization / Labat, N; Saysset, N; Touboul, A; Danto, Y; Cova, Paolo; Fantini, F.. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 37:(1997), pp. 1675-1678. [10.1016/S0026-2714(97)00137-6]
Analysis of hot electron degradations in pseudomorphic HEMTs by DCTS and LF noise characterization
COVA, Paolo;
1997-01-01
Abstract
Commercial pseudomorphic AlGaAs/InGaAs HEMTs designed for low noise operation have demonstrated weak sensitivity to hot electron stress. We have investigated underlying physical mechanisms by LF channel noise analysis and Drain Current Transient Spectroscopy (DCTS). A link has been established between the enhancement due to hot electron stress of the hole current collected by the gate and the modulation of electron trap effective density located beneath the gate.| File | Dimensione | Formato | |
|---|---|---|---|
|
Micrel 1997 reprint.pdf
non disponibili
Tipologia:
Documento in Post-print
Licenza:
NON PUBBLICO - Accesso privato/ristretto
Dimensione
266.03 kB
Formato
Adobe PDF
|
266.03 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
