For the first time in our knowledge a correlation between hot electrons induced degradation and cathodoluminescence (CL) signal in InAlAs/InGaAs/InP HEMTs has been found. The SEM CL spectra of stressed devices reveal a clear reduction in the intensity of the signal collected from the gate-drain region, which confirms the hypothesis of traps development in such region, already supported by changes in the electrical characteristics. This technique can then be used for physical investigation of the hot electron stress damage induced in InP based HEMTs.

Cathodoluminescence from hot electron stressed InP HEMTs / Cova, Paolo; G., Meneghesso; G., Salviati; E., Zanoni. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 39:(1999), pp. 1073-1078. [10.1016/S0026-2714(99)00149-3]

Cathodoluminescence from hot electron stressed InP HEMTs

COVA, Paolo;
1999-01-01

Abstract

For the first time in our knowledge a correlation between hot electrons induced degradation and cathodoluminescence (CL) signal in InAlAs/InGaAs/InP HEMTs has been found. The SEM CL spectra of stressed devices reveal a clear reduction in the intensity of the signal collected from the gate-drain region, which confirms the hypothesis of traps development in such region, already supported by changes in the electrical characteristics. This technique can then be used for physical investigation of the hot electron stress damage induced in InP based HEMTs.
1999
Cathodoluminescence from hot electron stressed InP HEMTs / Cova, Paolo; G., Meneghesso; G., Salviati; E., Zanoni. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 39:(1999), pp. 1073-1078. [10.1016/S0026-2714(99)00149-3]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11381/1642668
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