In this paper we demonstrate the straight correlation between the integrated light emitted and the DC currents in GaAs-based pseudomorphic HEMTs biased at high drain voltage, when, due to hot electrons, impact ionization takes place. By means of electrical and optical measurements, we found three different recombination mechanisms, which originate the light emission in three different energy ranges.
Correlation between light emission and currents in pseudomorphic HEMTs / Cova, Paolo; Fantini, F; Manfredi, M.. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 38:(1998), pp. 507-510. [10.1016/S0026-2714(97)00233-3]
Correlation between light emission and currents in pseudomorphic HEMTs
COVA, Paolo;
1998-01-01
Abstract
In this paper we demonstrate the straight correlation between the integrated light emitted and the DC currents in GaAs-based pseudomorphic HEMTs biased at high drain voltage, when, due to hot electrons, impact ionization takes place. By means of electrical and optical measurements, we found three different recombination mechanisms, which originate the light emission in three different energy ranges.File in questo prodotto:
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