IGBT reliability is becoming of great relevance, due to the range of application of these devices. Nevertheless, no standard test methods have been established, in order to evaluate their power cycling reliability. On this paper we report on the effect of ΔT and Tjmax on the power cycling capability of IGBT dice, by means of a matrix of stress cycles with different values of ΔT and Tjmax. Failure analysis has been performed, in order to understand the failure mechanisms induced by the stress.
On the effect of power cycling stress on IGBT modules / Cova, Paolo; Fantini, F.. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - 38:(1998), pp. 1347-1352. [10.1016/S0026-2714(98)00081-X]
On the effect of power cycling stress on IGBT modules
COVA, Paolo;
1998-01-01
Abstract
IGBT reliability is becoming of great relevance, due to the range of application of these devices. Nevertheless, no standard test methods have been established, in order to evaluate their power cycling reliability. On this paper we report on the effect of ΔT and Tjmax on the power cycling capability of IGBT dice, by means of a matrix of stress cycles with different values of ΔT and Tjmax. Failure analysis has been performed, in order to understand the failure mechanisms induced by the stress.| File | Dimensione | Formato | |
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