We present a stochastic model which simulates electromigration damage in metallic interconnects by biased percolation of a random resistor network. The main features of experiments including Black's law and the log-normal distribution of the times to failure are well reproduced together with compositional effects showing up in early stage measurements made on Al-0.5%Cu and Al-1%Si lines.
A Percolative Approach to Electromigration Modelling / C., Pennetta; L., Reggiani; Trefan, G. Y.; F., Fantini; A., Scorzoni; DE MUNARI, Ilaria. - In: MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS. - ISSN 0272-9172. - 612:(2000), pp. D2.7.1-D2.7.6. [10.1557/PROC-612-D2.7.1]