A study of CdS films and how they can influence the CdS/CdTe solar cell interface is reported. CdS is prepared by two different methods. The first one is the closed-space-sublimation (CSS) and the second one is sputtering. Both methods, if they are used properly, are suitable to prepare cells with efficiencies larger than 14%. We found out that, in order to obtain high efficiency cells, CdS prepared by CSS has to be made in presence of O/sub 2/, while CdS prepared by sputtering has to be made in presence of fluorine. In both cases the films need to be washed in acetic acid or annealed at 400-420/spl deg/C in an atmosphere containing H/sub 2/. Both treatments seem to be effective in removing an insulating surface layer, which is formed during the CdS preparation. This insulating material could behave as a good passivant for the CdS grain boundaries.

“The role of CdS preparation method in the performance of CdTe/CdS thin film solar cell” / Romeo, Nicola; Bosio, Alessio. - CD-ROM. - 1:(2003), pp. 469-470. (Intervento presentato al convegno 3rd World Conference on Photovoltaic Energy Conversion tenutosi a Osaka, Japan nel 11-18 May 2003).

“The role of CdS preparation method in the performance of CdTe/CdS thin film solar cell”

ROMEO, Nicola
Membro del Collaboration Group
;
BOSIO, Alessio
Validation
2003-01-01

Abstract

A study of CdS films and how they can influence the CdS/CdTe solar cell interface is reported. CdS is prepared by two different methods. The first one is the closed-space-sublimation (CSS) and the second one is sputtering. Both methods, if they are used properly, are suitable to prepare cells with efficiencies larger than 14%. We found out that, in order to obtain high efficiency cells, CdS prepared by CSS has to be made in presence of O/sub 2/, while CdS prepared by sputtering has to be made in presence of fluorine. In both cases the films need to be washed in acetic acid or annealed at 400-420/spl deg/C in an atmosphere containing H/sub 2/. Both treatments seem to be effective in removing an insulating surface layer, which is formed during the CdS preparation. This insulating material could behave as a good passivant for the CdS grain boundaries.
2003
4-9901816-0-3
“The role of CdS preparation method in the performance of CdTe/CdS thin film solar cell” / Romeo, Nicola; Bosio, Alessio. - CD-ROM. - 1:(2003), pp. 469-470. (Intervento presentato al convegno 3rd World Conference on Photovoltaic Energy Conversion tenutosi a Osaka, Japan nel 11-18 May 2003).
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11381/1510483
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