A study of CdS films and how they can influence the CdS/CdTe solar cell interface is reported. CdS is prepared by two different methods. The first one is the closed-space-sublimation (CSS) and the second one is sputtering. Both methods, if they are used properly, are suitable to prepare cells with efficiencies larger than 14%. We found out that, in order to obtain high efficiency cells, CdS prepared by CSS has to be made in presence of O/sub 2/, while CdS prepared by sputtering has to be made in presence of fluorine. In both cases the films need to be washed in acetic acid or annealed at 400-420/spl deg/C in an atmosphere containing H/sub 2/. Both treatments seem to be effective in removing an insulating surface layer, which is formed during the CdS preparation. This insulating material could behave as a good passivant for the CdS grain boundaries.
“The role of CdS preparation method in the performance of CdTe/CdS thin film solar cell” / Romeo, Nicola; Bosio, Alessio. - CD-ROM. - 1:(2003), pp. 469-470. (Intervento presentato al convegno 3rd World Conference on Photovoltaic Energy Conversion tenutosi a Osaka, Japan nel 11-18 May 2003).
“The role of CdS preparation method in the performance of CdTe/CdS thin film solar cell”
ROMEO, Nicola
Membro del Collaboration Group
;BOSIO, AlessioValidation
2003-01-01
Abstract
A study of CdS films and how they can influence the CdS/CdTe solar cell interface is reported. CdS is prepared by two different methods. The first one is the closed-space-sublimation (CSS) and the second one is sputtering. Both methods, if they are used properly, are suitable to prepare cells with efficiencies larger than 14%. We found out that, in order to obtain high efficiency cells, CdS prepared by CSS has to be made in presence of O/sub 2/, while CdS prepared by sputtering has to be made in presence of fluorine. In both cases the films need to be washed in acetic acid or annealed at 400-420/spl deg/C in an atmosphere containing H/sub 2/. Both treatments seem to be effective in removing an insulating surface layer, which is formed during the CdS preparation. This insulating material could behave as a good passivant for the CdS grain boundaries.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.