The realization of low resistivity and stable contacts on p-type CdTe is still challenging, especially if high annealing temperatures must be avoided. In this paper, the electrical characteristics of Sb2Te3 contacts on p-type CdTe single crystals are studied. It is found that the resistivity of the contacts is low and constant with time. © 2004 IEEE.
Characterization of Sb2Te3 ohmic contacts on p-type CdTe single crystals / Zappettini, A; Bissoli, F; Gombia, E; Bosio, Alessio; Romeo, Nicola. - In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE. - ISSN 0018-9499. - 7:(2004), pp. 4518-4519.
Characterization of Sb2Te3 ohmic contacts on p-type CdTe single crystals
BOSIO, Alessio;ROMEO, Nicola
2004-01-01
Abstract
The realization of low resistivity and stable contacts on p-type CdTe is still challenging, especially if high annealing temperatures must be avoided. In this paper, the electrical characteristics of Sb2Te3 contacts on p-type CdTe single crystals are studied. It is found that the resistivity of the contacts is low and constant with time. © 2004 IEEE.File in questo prodotto:
File | Dimensione | Formato | |
---|---|---|---|
artic-15.pdf
non disponibili
Tipologia:
Documento in Post-print
Licenza:
Creative commons
Dimensione
426.23 kB
Formato
Adobe PDF
|
426.23 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.