The optical properties of blue InGaN-based light-emitting diodes aged at high current levels have been studied by electroluminescence and cathodoluminescence. The onset of a broad optical band peaked at about 3.1 eV in devices aged without a heat sink (junction temperature higher than 300 °C) has been correlated to an electrothermal threshold effect. The band is attributed to the dissociation of Mg–H complexes inside the p-type layers and to the consequent formation of Mg-related metastable complexes acting as acceptors. Subsequent electron-beam irradiation determines the almost complete quenching of the band.
Optical evidence of an electro-thermal threshold in the degradation of InGaN-based LEDs during electrical stress / Pavesi, Maura; G., Salviati; N., Armani; F., Rossi; M., Manfredi; G., Meneghesso; S., Levada; E., Zanoni; S., Du; I., Eliashevich. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 84:17(2004), pp. 3403-3405. [10.1063/1.1734682]
Optical evidence of an electro-thermal threshold in the degradation of InGaN-based LEDs during electrical stress
PAVESI, Maura;
2004-01-01
Abstract
The optical properties of blue InGaN-based light-emitting diodes aged at high current levels have been studied by electroluminescence and cathodoluminescence. The onset of a broad optical band peaked at about 3.1 eV in devices aged without a heat sink (junction temperature higher than 300 °C) has been correlated to an electrothermal threshold effect. The band is attributed to the dissociation of Mg–H complexes inside the p-type layers and to the consequent formation of Mg-related metastable complexes acting as acceptors. Subsequent electron-beam irradiation determines the almost complete quenching of the band.File | Dimensione | Formato | |
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